Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T08:03:24.858Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystallization of Indium Implanted Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

E. Nygren ,
J. S. Williams ,
A. Pogany ,
R. G. Elliman ,
G. L. Olson  and
J. C. McCallum
E. Nygren
Affiliation:
RMIT, Microelectronics Technology Centre, Melbourne 3000, Victoria, Australia
J. S. Williams
Affiliation:
RMIT, Microelectronics Technology Centre, Melbourne 3000, Victoria, Australia
A. Pogany
Affiliation:
RMIT, Microelectronics Technology Centre, Melbourne 3000, Victoria, Australia
R. G. Elliman
Affiliation:
CSIRO, Chemical Physics, Clayton 3168, Victoria, Australia
G. L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA, 90625 U.S.A.
J. C. McCallum
Affiliation:
Melbourne University, School of Physics, Parkville 3052, Australia
Get access

Abstract

The annealing behavior of In+-implanted amorphous Si layers is reviewed. Particular attention is given to the amorphous to polycrystalline transformation for peak In concentrations > 0.5 atomic percent. New data concerning the transformation rate, associated In transport and microstructure are presented and phase transformation mechanisms are discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 307
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Jacobson, D.C. and Poate, J.M., in these proceedingsGoogle Scholar
[2] Elliman, R.G., Gibson, J.M., Jacobson, D.C., Poate, J.M. and Williams, J.S., Appl. Phys. Lett. 46, 478 (1985)Google Scholar
[3] Spaepen, F. and Turnbull, D., AIP Conf. Proc. 50, 73 (1979); B.G. Bagely and H.S. Chen, AIP Conf. Proc. 50, 97 (1979)Google Scholar
[4] Peercy, P.S., in these proceedingsGoogle Scholar
[5] Olson, G.L., Kokorowski, S.A., Roth, J.A., and Hess, L.D. in Laser-Solid Interactions and Transient Thermal Processing of Materials, edited by J., Narayan, W.L., Brown and R.A., Lemons (North Holland, New York, 1983), Proc. Mater. Res. Soc., 141Google Scholar
[6] Olson, G.L., Roth, J.A., Nygren, E. and Pogany, A., in these proccedingsGoogle Scholar
[7] Williams, J.S. and Short, K.T., in Metastable Materials Formation by Ion Implantation, edited by S.T., Picraux and W.J., Choyke (Materials Research Society, Pittsburgh, PA, 1985), Proc. Mater. Res. Soc. 52, 271 (1985)Google Scholar
[8] Williams, J.S. and Elliman, R.G., Nucl. Instrum. Meth. 183, 758 (1981)Google Scholar
[9] Pennycook, S.J., Culbertson, R.J. and Narayan, J., J. Mat. Res. 1, 476 (1986)Google Scholar
[10] Fletcher, J., Narayan, J. and Holland, O.W., Inst. Phys. Conf. Ser. 60, 295 (1985); J. Narayan and O.W. Holland, in Metastable Materials Formation by Ion Implantation, edited by S.T. Picraux and W.J. Choyke (Materials Research Society, Pittsburgh, PA 1985), Proc. Mater. Res. Soc. 52, 117 (1985)Google Scholar
[11] Poate, J.M. and Williams, J.S., Ion Implantation and Beam Processing (Academic, New York, 1984)Google Scholar
[12] Williams, J.S. and Elliman, R.G., Appl. Phys. Lett. 40, 266 (1982)Google Scholar
[13] McCallum, J.C., Brown, R.A., Nygren, E., Williams, J.S. and Olson, G.L., to be published Proc. Mater. Res. Soc. 69 (1986)Google Scholar
[14] For example, see [10] or Williams, J.S., in Surface Modification and Alloying, edited by J.M., Poate, G., Foti and D.C., Jacobson (Plenum, New York, 1983) and references thereinGoogle Scholar
[15] Elliman, R.G., Short, K.T., Poate, J.M., Williams, J.S. and Nygren, E., to be publishedGoogle Scholar
[16] Suni, I., Goltz, G., Nicolet, M.A., and Lau, S.S., Appl. Phys. Lett. 40, 269 (1982)Google Scholar
[17] Swaminathan, B., Saraswat, K.C., Dutton, R.W. and Kamins, T.I., Appl. Phys. Lett. 40, 795 (1982)Google Scholar
[18] Donovan, E.P., Spaepen, F., Turnbull, D., Poate, J.M., and Jacobson, D.C., J. Appl. Phys. 57, 1795 (1985)Google Scholar
[19] Hultgren, R., Desai, P.D., Hawkins, D.T., Gleiser, M., Kelly, K.K., and Wagman, D.D., Selected Values of the Thermodynamic Properties of the Elements (American Society for Metals, Metals Park, Ohio, 1973)Google Scholar
[20] Olesinski, R.W., Kanani, N. and Abbachian, G.J., Bull. Alloy Phase Diagrams 6, 128 (1985)Google Scholar
[21] Cullis, A.G., Webber, H.C. and Chew, N.G., Appl. Phys. Lett. 36, 547 (1980)Google Scholar
[22] Nygren, E., Olson, G.L., Williams, J.S. and Pogany, A., to be TublishedGoogle Scholar