Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-19T14:46:45.217Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystallization of Amorphous Silicon Thin Films by Microwave Heating

Published online by Cambridge University Press:  03 November 2014

Tomohiko Nakamura ,
Shinya Yoshidomi ,
Masahiko Hasumi ,
Toshiyuki Sameshima  and
Tomohisa Mizuno
Tomohiko Nakamura
Affiliation:
Tokyo University of Agriculture and Technology, Tokyo, 184-8588 Japan
Shinya Yoshidomi
Affiliation:
Tokyo University of Agriculture and Technology, Tokyo, 184-8588 Japan
Masahiko Hasumi
Affiliation:
Tokyo University of Agriculture and Technology, Tokyo, 184-8588 Japan
Toshiyuki Sameshima
Affiliation:
Tokyo University of Agriculture and Technology, Tokyo, 184-8588 Japan
Tomohisa Mizuno
Affiliation:
Kanagawa University, Kanagawa, 259-1293 Japan
Get access

Abstract

We report crystallization of amorphous silicon (a-Si) thin films and improvement of thin film transistors (TFTs) characteristics using 2.45 GHz microwave heating assisted with carbon powders. Undoped 50-nm-thick a-Si films were formed on quartz substrates and heated by microwave irradiation for 2, 3, and 4 min. Raman scattering spectra revealed that the crystalline volume ratio increased to 0.42 for the 4-min heated sample. The dark and photo electrical conductivities measured by Air mass 1.5 at 100 mW/cm2 were 2.6x10-6 and 5.2x10-6 S/cm in the case of 4-min microwave heating followed by 1.3x106-Pa-H2O vapor heat treatment at 260°C for 3 h. N channel polycrystalline silicon TFTs characteristics were improved by the combination of microwave heating with high-pressure H2O vapor heat treatment. The threshold voltage decreased from 5.3 to 4.2 V and the effective carrier mobility increased from 18 to 25 cm2/Vs.

Keywords

annealingcrystallinethin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1666: Symposium A – Film-Silicon Science and Technology , 2014 , mrss14-1666-a10-01
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Serikawa, T., Shirai, S., Okamoto, A. and Suyama, S., “ Electrical Characteristics of High-Mobility Fine-Grain Poly-Si TFTs from Laser Irradiated Sputter-Deposited Si Film”, Jpn. J. Appl. Phys. 28 (1989) 1871 Google Scholar
Uchikoga, S. and Ibaraki, N., “ Low temperature poly-Si TFT-LCD by excimer laser anneal”, Thin Solid Films 383 (2001) 19.CrossRefGoogle Scholar
Sameshima, T., Hara, M. and Usui, S., “XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFTs”, Jpn. J. Appl. Phys. 28 (1989) 1789–1793.CrossRefGoogle Scholar
Sameshima, T. and Satoh, M., “Improvement of SiO2 Properties by Heating Treatment in High Pressure H2O Vapor”, Jpn. J. Appl. Phys. 36 (1997) L687–L689.CrossRefGoogle Scholar
Sameshima, T., Satoh, M., Sakamoto, K., Hisamatsu, A., Ozaki, K. and Saitoh, K., “Heat Treatment of Amorphous and Polycrystalline Silicon Thin Film with H2O Vapor”, Jpn. J. Appl. Phys. 37 (1998) L112–L114.CrossRefGoogle Scholar
Sameshima, T., Satoh, M., Sakamoto, K., Ozaki, K. and Saitoh, K., “Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with High-Pressure H2O Vapor”, Jpn. J. Appl. Phys. 37 (1998) 4254–4257.CrossRefGoogle Scholar