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Crystallization Of Amorphous Silicon During Thin Film Gold Reaction

Published online by Cambridge University Press:  26 February 2011

Lars G. Hultman ,
P. A. Psaras  and
H.T.G. Hentzell
Lars G. Hultman
Affiliation:
Thin Film Group, Dept. of Physics and Measurement Technology, S-58183, Linkoping, Sweden
P. A. Psaras
Affiliation:
IBM, Thomas J. Watson Research Center, Yorktown Heights, New York, 10598, USA
H.T.G. Hentzell
Affiliation:
Thin Film Group, Dept. of Physics and Measurement Technology, S-58183, Linkoping, Sweden
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Abstract

The crystallization of α-Si in α-Si(50nm) and Au(5nm) thin film bi-layers has been investigated during heat treatment in a transmission electron microscope (TEM). When crystallization of α-Si first begins at 130°C the Au-Si alloy reflections observed at lower temperatures vanish and several new reflections from metastable Au-Si compounds occur. Dendritically growing islands of poly-Si are observed after heating at 175°C. If the samples are held constant at 175°C for ten minutes, the poly-Si islands grow together. The formation of poly-Si depends on the diffusion of Au into α-Si and the formation of metastable Si-Au compounds. After crystallization Au segregates to the front and back surface of the poly-Si film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 109
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Hiraki, A., Shuto, K., Kim, S., Kammura, W. and Iwami, M., Appl. Phys. Lett., 31, 611 (1977).Google Scholar
2. Natashima, K., Iwami, M. and Hiraki, A., Thin Solid Films, 21, 423 (1975).Google Scholar
3. Braicovich, L., Abbati, I., Miller, J.N., Lindau, I., Schwartz, S., Skeath, P.R., Su, C.Y. and Spicer, W.E., J. Vac. Sci. Technol., 17 (5), 1005 (1980).Google Scholar
4. Cros, A., Salvan, F. and Derrier, J., J. Appl. Phys., 52., 4757 (1981).Google Scholar
5. Hiraki, A., Shimizu, A., Iwami, M., Narusawa, T. and Komiya, S., Appl. Phys. Lett., 26, 57 (1975).Google Scholar
6. Thompson, M.J., Nemanich, R.J. and Tsai, C.C., Surf. Sci., 132, 250 (1983).Google Scholar
7. Green, A.K. and Bauer, E., J. Appl. Phys., 47, 1284 (1976).Google Scholar
8. Predecki, P., Giessen, B.C. and Grant, M.J., Trans. Metall. Soc. AIME, 233, 1438 (1965).Google Scholar
9. Krutenat, R.C., Tien, J.K. and Fornwalt, D.E., Metall. Trans., 2, 1479 (1971).Google Scholar
10. Anantharaman, T.R., Luo, H.L. and Klement, W., Nature (London), 210, 1040 (1966).Google Scholar
11. Anderssen, G.A., Bestel, J.L., Johnson, A.A. and Post, P., Mater. Sci. Eng., 7, 83 (1971).Google Scholar
12. Phiofsky, E., Ravi, K. V., Brooks, J. and Hall, E., J. Electrochem. Soc, 119, 527 (1972).Google Scholar
13. Suryanarayana, C. and Anantharaman, T.R., Mater. Sci. Eng., 13, 73 (1972).Google Scholar
14. Ohere, N.G. and Loural, C.A., Thin Solid Films, 81, 213 (1981).Google Scholar
15. “Inorganic Index to the Powder Diffraction File”, Joint Committee on Powder Diffraction Standards, Pennsylvania (1972).Google Scholar