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Crystallization and Melting of Amorphous Silicon on a Microsecond Time Scale

Published online by Cambridge University Press:  28 February 2011

G. L. Olson ,
J. A. Roth ,
E. Nygren ,
A. P. Pogany  and
J. S. Williams
G. L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
J. A. Roth
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
E. Nygren
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne, Australia
A. P. Pogany
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne, Australia
J. S. Williams
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne, Australia
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Abstract

Measurements of the competition beween solid phase epitaxy, solid phase random nucleation, and melting in amorphous Si on a microsecond time scale are reported. We find that the behavior of amorphous Si under microsecond pulsed dye laser irradiation depends strongly on film thickness and temperature. In “thin” (≲1000 Å) films solid phase epitaxy is observed at temperatures up to and exceeding 1300°C with random nucleation dominating at T>1330° C; however, melting of amorphous Si does not occur. In contrast, in “thick” (2600 Å) amorphous films melting is observed at T˜1190°C. These results are discussed with respect to measurements obtained previously in the nanosecond time regime using Q-switched laser heating and in the 0.1–1 millisecond regime using “chopped beam” cw laser heating.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 109
Copyright
Copyright © Materials Research Society 1987

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References

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