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The Crystallization and Amorphization of Si from the Melt at Interface Velocities Approaching 20 m/sec

Published online by Cambridge University Press:  15 February 2011

J. M. Poate
J. M. Poate*
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey, 07974
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Abstract

Laser melting has been used to controllably vary the Si solidification velocity in the range 1–20 m/sec. The segregation of implanted impurities is found to be critically dependent on the liquid-solid interface velocity and substrate orientation for velocities <10 m/sec. This behavior can be understood in terms of different degrees of undercooling of the melt. While the (100) epitaxy is generally excellent up to velocities ∼10 m/sec, twins are observed for (111) epitaxy in the range ∼5–10 m/sec. Amorphous Si is produced from the melt for velocities in the vicinity of 20 m/sec. The amorphous phase forms at lower velocities on the (111) interface than on the (100) interface. These estimates of interface velocities come from heat flow calculations which do not include undercooling of the melt. Undercooling does not affect interface velocities ∼3 m/sec but significant lowering of the higher velocities could result from such effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 121
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Cullis, A. G., Webber, H. C., Poate, J. M. and Simons, A. L., Appl. Phys. Lett. 36, 320 (1980).CrossRefGoogle Scholar
2. Baeri, P., Foti, G., Poate, J. M., Campisano, S. U. and Cullis, A. G., Appl. Phys. Lett. 38, 800 (1981).CrossRefGoogle Scholar
3. Wood, R. F. and Giles, G. E., Appl. Phys. Lett. 38, 422 (1981).CrossRefGoogle Scholar
4. Baeri, P., paper in this volume.Google Scholar
5. Auston, D. H., Surko, C. M., Venkatesan, T. N. C., Slusher, R. E. and Golovchenko, J. A., A. I. P. Conf. Proc. 50 “Laser–Solid Interactions and Laser Processing,” 1979, p. 11, edited by Ferris, S. D., Leamy, H. J. and Poate, J. M..Google Scholar
6. Gilmer, G. H., private communication.Google Scholar
7. Cullis, A. G., Webber, H. C., Chew, N. G., Poate, J. M. and Baeri, P., to be published.Google Scholar
8. Galvin, G. L., Thompson, M. O., Mayer, J. W., Hammond, R. B. and Peercy, P. S., to be published.Google Scholar
9. Spaepen, F. and Turnbull, D., Chapter 2 in “Laser Annealing of Semiconductors,” eds. Poate, J. M. and Mayer, J. W., Academic Press, New York (1982).Google Scholar
10. White, C. W., paper in this volume.Google Scholar
11. Narayan, J., paper in this volume.Google Scholar
12. Baeri, P. and Campisano, S. U., Chapter 4 in “Laser Annealing of Semiconductors,” eds. Poate, J. M. and Mayer, J. W., Academic Press, New York (1982).Google Scholar
13. Cahn, J. W., Coriell, S. R. and Boettinger, W. J. in “Laser and Electron-Beam Processing of Materials,” 1980, p. 89 (Academic Press, New York) edited by White, C. W. and Peercy, P. S..CrossRefGoogle Scholar
14. Jackson, K. A., Gilmer, G. H. and Leamy, H. J. in “Laser and Electron-Beam Processing of Materials,” 1980, p. 104 (Academic Press, New York) edited by White, C. W. and Peercy, P. S..CrossRefGoogle Scholar
15. Wood, R. F., Appl. Phys. Lett. 37, 302 (1980).CrossRefGoogle Scholar
16. Aziz, M. J., to be published.Google Scholar
17. Cline, H. E., to be published.Google Scholar
18. Jackson, K. A. and Gilmer, G. H., private communication.Google Scholar
19. Liu, P. L., Yen, R., Bloembergen, N. and Hodgson, R. T., Appl. Phys. Lett. 34, 864 (1979).CrossRefGoogle Scholar
20. Tsu, R., Hodgson, R. T., Tan, T. Y. and Baglin, J. E. E., Phys. Rev. Letts. 42, 1356 (1979).CrossRefGoogle Scholar
21. Cullis, A. G., Webber, H. C. and Chew, N. G., paper in this volume.Google Scholar
22. Liu, J. M., Yen, R., Donovan, E. P., Bloembergen, N. and Hodgson, R. T., Appl. Phys. Lett. 38, 617 (1981).CrossRefGoogle Scholar
23. Foti, G., Bean, J. C., Poate, J. M. and Magee, C., Appl. Phys. Lett. 36, 840 (1980).CrossRefGoogle Scholar
24. Brown, W. L. in “Laser and Electron-Beam Solid Interactions and Materials Processing,” 1981 p. 1, (North Holland, New York) edited by Gibbons, J. F., Hess, L. D. and Sigmon, T. W..Google Scholar