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Crystallinity Analysis of Amorphous-Crystalline Mixed Phase Silicon films Using Exafs Method

Published online by Cambridge University Press:  28 February 2011

Masatoshi Wakagi ,
Toshiki Kaneko ,
Kiyoshi Ogata  and
Asao Nakano
Masatoshi Wakagi
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd., 4026 Kuji-cho, Hitachi-shi, 319–12, Japan.
Toshiki Kaneko
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd., 4026 Kuji-cho, Hitachi-shi, 319–12, Japan.
Kiyoshi Ogata
Affiliation:
Production Engineering Research Laboratory, Hitachi Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, 244, Japan.
Asao Nakano
Affiliation:
Production Engineering Research Laboratory, Hitachi Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, 244, Japan.
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Abstract

The crystalline phase fraction (Xc) of amorphous-crystalline mixed phase Si films prepared by thermal annealing of a-Si:H films and by plasma CVD and chemical annealing methods was investigated by the EXAFS method. The EXAFS spectra of these films were represented by linear-combination of a-Si:H and c-Si EXAFS spectra. The values of Xc were analyzed by least-square curve fitting. The crystallinity was also analyzed by a Raman scattering method measured from both sides of the films. Then, the Xc values analyzed by the Raman method were calibrated by the EXAFS analysis results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 555
Copyright
Copyright © Materials Research Society 1993

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References

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