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Crystal Structure Dependence of Antiferromagnetic Coupling in FE/SI Multilayers

Published online by Cambridge University Press:  15 February 2011

R. P. Michel ,
A. Chaiken  and
M. A. Wall
R. P. Michel
Affiliation:
Materials Science and Technology Division, Lawrence Livermore National Laboratory, P. 0. Box 808, Livermore CA 94551
A. Chaiken
Affiliation:
Materials Science and Technology Division, Lawrence Livermore National Laboratory, P. 0. Box 808, Livermore CA 94551
M. A. Wall
Affiliation:
Materials Science and Technology Division, Lawrence Livermore National Laboratory, P. 0. Box 808, Livermore CA 94551
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Abstract

Recent reports of temperature dependent antiferromagnetic coupling in Fe/Si multilayers have motivated the generalization of models describing magnetic coupling in metal/metal multilayers to metal/insulator and metal/semiconductor layered systems. Interesting dependence of the magnetic properties on layer thickness and temperature are predicted. We report measurements that show the antiferromagnetic (AF) coupling observed in Fe/Si multilayers is strongly dependent on the crystalline coherence of the silicide interlayer. Electron diffraction images show the silicide interlayer has a CsCl structure. It is not clear at this time whether the interlayer is a poor metallic conductor or a semiconductor so the relevance of generalized coupling theories is unclear.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 384: Symposium L – Magnetic Ultrathin films, Multilayers and Surfaces , 1995 , 195
Copyright
Copyright © Materials Research Society 1995

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References

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