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Crystal Quality and Surface Morphology Improvement of Movpe-Grown GaAs-on-Si Using Tertiarybutylarsine

Published online by Cambridge University Press:  25 February 2011

S. MIYAGAKI ,
S. Ohkubo ,
K. Takai ,
N. Takagi ,
M. Kimura ,
Y. Kikuchi ,
T. Eshita  and
K. Takasaki
S. MIYAGAKI
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
S. Ohkubo
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
K. Takai
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
N. Takagi
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
M. Kimura
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
Y. Kikuchi
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
T. Eshita
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
K. Takasaki
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
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Abstract

We developed GaAs heteroepitaxy on a Si substrate by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBAs). In buffer layer growth at 450°C, the surface morphology and crystal quality of TBAs-grown films were slightly inferior to those of AsH3-grown films. At buffer layer growth below 400°C, the quality of TBAs-grown films improved. The GaAs films we grew using TBAs had a better quality than those grown using AsH2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 345
Copyright
Copyright © Materials Research Society 1993

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References

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