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Crystal Growth and Defect Characterization of AlN Single Crystals

Published online by Cambridge University Press:  01 February 2011

Shaoping Wang ,
Balaji Raghothamachar ,
Michael Dudley  and
Andrew G. Timmerman
Shaoping Wang
Affiliation:
[email protected], Fairfield Crystal Technology, LLC, 8 South End Plaza, New Milford, CT, 06776, United States, 860-354-2111, 860-354-3093
Balaji Raghothamachar
Affiliation:
[email protected], SUNY at Stony Brook, Department of Materials Science & Engineering, United States
Michael Dudley
Affiliation:
[email protected], SUNY at Stony Brook, Department of Materials Science & Engineering
Andrew G. Timmerman
Affiliation:
[email protected], Fairfield Crystal Technology, LLC, United States
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Abstract

In this paper, we report results from seeded AlN PVT growth experiments carried out using SiC seeds. The purpose of the experiments was to understand the morphology and crystalline quality of PVT AlN crystals grown under the crystal growth environments investigated. AlN single crystal films of 120-650μm in thickness were grown and freestanding AlN single crystal pieces up to 4×5mm2 were obtained. Surface morphologies and crystal defects in these AlN single crystals were studied using optical microscopy. Selected AlN single crystals were studied using a high-resolution triple-axis X-ray diffraction technique and a Synchrotron White Beam X-ray Diffraction Topography technique. Defects identified in AlN crystals are cracks, dislocations, grain boundaries and crystallite inclusions.

Keywords

crystal growthdefectsx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF30-06
Copyright
Copyright © Materials Research Society 2006

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References

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