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Cross-Sectioning Specific Devices and Regions in I.C. Wafers

Published online by Cambridge University Press:  21 February 2011

J. N. Brown  and
T. T. Sheng
J. N. Brown
Affiliation:
AT & T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
T. T. Sheng
Affiliation:
AT & T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

Line widths of less than a micron and junction depths within devices of the order of a thousand angstroms are common practice In today's electronic components. Transmission electron microscopy (TEM) is fast becoming a very valuable and often essential tool in many areas of semiconductor manufacture. The characterization of a given device structure is often required to fully understand its electrical behavior. This paper will review the methods that can be used to prepare cross-sectional samples from specific regions within an integrated circuit device for examination in the TEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 115: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials I , 1987 , 29
Copyright
Copyright © Materials Research Society 1988

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References

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