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Cross-Sectional TEM Study of Three-Dimensional MOS Devices

Published online by Cambridge University Press:  28 February 2011

Kyung-Ho Park ,
T. Sasaki ,
T. Iwai ,
M. Hasegawa  and
N. Sasaki
Kyung-Ho Park
Affiliation:
Fujitsu Ltd., Advanced Technology Division, 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, JAPAN
T. Sasaki
Affiliation:
Fujitsu Ltd., Advanced Technology Division, 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, JAPAN
T. Iwai
Affiliation:
Fujitsu Ltd., Advanced Technology Division, 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, JAPAN
M. Hasegawa
Affiliation:
Fujitsu Ltd., Advanced Technology Division, 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, JAPAN
N. Sasaki
Affiliation:
Fujitsu Ltd., Advanced Technology Division, 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, JAPAN
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Abstract

This paper describes cross-sectional transmission electron microscopy (TEM) observation on finished 3-D MOS devices, fabricated with a laser-recrystallized SOI. The laser-recrystallized SOI contained crystal defects such as micro-twinning, grain boundaries and dislocations. It is also clearly shown that the interface roughness between the gate oxide and SOI is as much as 20 nm height, in where the interface is very smooth between the gate oxide and bulk silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 403
Copyright
Copyright © Materials Research Society 1988

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References

1 Nakano, M., Fujitsu Sei. Tech. J. 23, 71 (1987)Google Scholar
2 Pinizzotto, R. F., in Silicon-on-Insulator: Its Technology and Applications, edited by Furukawa, S. (KTK Scientific Publishers, Tokyo 1985) p251 CrossRefGoogle Scholar
3 Kawamura, S., Sasaki, N., Iwai, T., Nakano, M. and Takagi, M., IEEE Electron Device Letter, EDL-4,10, 366 (1983)CrossRefGoogle Scholar
4 Saito, T. and Ohdomari, I., in Silicon-on-Insulator: Its Technology and Applications, edited by Furukawa, S. (KTK Scientific Publishers, Tokyo 1985) p171 CrossRefGoogle Scholar
5 Yamamoto, H., Ishikawa, H., Furukawa, S., Tamura, M. and Tokuyama, T., in Silicon-on-Insulator: Its Technology and Applications, edited by Furukawa, S. (KTK Scientific Publishers, Tokyo 1985) p187 CrossRefGoogle Scholar
6 Tamura, M., Miyao, M., Tokuyama, T., Yamamoto, H., Ishkawa, H. and Furukawa, S., in Silicon-on-Insulator: Its Technology and Applications, edited by Furukawa, S. (KTK Scientific Publishers, Tokyo 1985) p231 CrossRefGoogle Scholar
7 Narayan, J., Laser and Electron-Beam Interactions with Solid, edited by Appleton, B. R. and Celler, G. K. (Elsevier Science Publishing Company, 1982) p141 Google Scholar