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Cross-Sectional TEM Study of Three-Dimensional MOS Devices

Published online by Cambridge University Press:  28 February 2011

Kyung-Ho Park ,
T. Sasaki ,
T. Iwai ,
M. Hasegawa  and
N. Sasaki
Kyung-Ho Park
Affiliation:
Fujitsu Ltd., Advanced Technology Division, 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, JAPAN
T. Sasaki
Affiliation:
Fujitsu Ltd., Advanced Technology Division, 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, JAPAN
T. Iwai
Affiliation:
Fujitsu Ltd., Advanced Technology Division, 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, JAPAN
M. Hasegawa
Affiliation:
Fujitsu Ltd., Advanced Technology Division, 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, JAPAN
N. Sasaki
Affiliation:
Fujitsu Ltd., Advanced Technology Division, 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, JAPAN
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Abstract

This paper describes cross-sectional transmission electron microscopy (TEM) observation on finished 3-D MOS devices, fabricated with a laser-recrystallized SOI. The laser-recrystallized SOI contained crystal defects such as micro-twinning, grain boundaries and dislocations. It is also clearly shown that the interface roughness between the gate oxide and SOI is as much as 20 nm height, in where the interface is very smooth between the gate oxide and bulk silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 403
Copyright
Copyright © Materials Research Society 1988

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References

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