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Cross-Sectional Tem Sample Preparation Method Using Fib Etching for Thin-Film Transistor

Published online by Cambridge University Press:  10 February 2011

K. Tsujimoto ,
S. Tsuji ,
H. Takatsuji ,
K. Kuroda ,
H. Saka  and
N. Miura
K. Tsujimoto
Affiliation:
ITES Ltd., Ichimiyake, Yasu-cho, Yasu-gun, Shiga 520-23, Japan.
S. Tsuji
Affiliation:
Display Technology, IBM Japan, Ltd., Shimotsuruma, Yamato-shi, Kanagawa 242, Japan
H. Takatsuji
Affiliation:
Display Technology, IBM Japan, Ltd., Shimotsuruma, Yamato-shi, Kanagawa 242, Japan
K. Kuroda
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464-01, Japan
H. Saka
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464-01, Japan
N. Miura
Affiliation:
ITES Ltd., Ichimiyake, Yasu-cho, Yasu-gun, Shiga 520-23, Japan.
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Abstract

A rapid and precise sample preparation method using focused ion beam (FIB) etching was developed for cross-sectional transmission electron microscopy (X-TEM) analysis of a thin-film transistor (TFT) fabricated on a glass substrate. Gallium (Ga) ions accelerated at 30 kV and at various incident beam angles were applied during FIB etching to create a uniform thin wall. We successfully prepared X-TEM specimens of long and fragile aluminum (Al) whiskers formed on thin Al films in TFT metallization, where a strong charge is built up during FIB etching. The effect of ion-beam-assisted tungsten deposition prior to FIB etching is discussed. A whisker having a length not exceeding approximately 10 #x00B5;m can be successfully etched to a thickness of 200 nm while keeping its original shape. The performance of this technique is demonstrated in applications to etching at other fragile locations related to TFTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 480: Symposium Z – Specimen Preparation for Transmission Electron Microscopy…IV , 1997 , 207
Copyright
Copyright x00A9; Materials Research Society 1997

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