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Cross-Sectional Scanning Tunneling Microscopy of III-V Semiconductor Structures

Published online by Cambridge University Press:  21 February 2011

R. M. Feenstra ,
A. Vaterlaus ,
J. M. Woodall ,
D. A. Collins  and
T. C. McGill
R. M. Feenstra
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
A. Vaterlaus
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
J. M. Woodall
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
D. A. Collins
Affiliation:
T. J. Watson Sr. Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
T. C. McGill
Affiliation:
T. J. Watson Sr. Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
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Abstract

The method of cross-sectional scanning tunneling microscopy (STM) is described. Illustrative examples are given of studies of III-V semiconductor systems, including low-temperature-grown (LT) GaAs, and InAs/GaSb superlattices. In each case, the STM permits the observation of structural features on an atomic scale. The associated electronic spectroscopy for states a few eV on either side of the Fermi-level can be determined. Such information is relevant for the operation of devices constructed from these layered semiconductor systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 332: Symposium U – Determining Nanoscale Physical Properties of Materials by Microscopy and Spectroscopy , 1994 , 15
Copyright
Copyright © Materials Research Society 1994

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References

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