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Cross Sectional AFM of Oxidized Porous Silicon

Published online by Cambridge University Press:  10 February 2011

Weijun Ye ,
Jordan Poler ,
B. Drozd  and
M. A. Hasan
Weijun Ye
Affiliation:
Department of Chemistry, University of North Carolina at Charlotte, Charlotte, NC 28223–0001
Jordan Poler
Affiliation:
Department of Chemistry, University of North Carolina at Charlotte, Charlotte, NC 28223–0001
B. Drozd
Affiliation:
Department of Electrical Engineering, University of North Carolina at Charlotte, Charlotte, NC 28223–0001
M. A. Hasan
Affiliation:
Department of Electrical Engineering, University of North Carolina at Charlotte, Charlotte, NC 28223–0001
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Abstract

Morphological studies of bulk porous-silicon (PS) are presented. Using the atomic force microscope, cleaved cross-sections of electrochemically processed porous-silicon were investigated. The porous-silicon/silicon interface was examined. Using a room temperature UV O3 generator, the porous silicon-samples were oxidized. Oxidation in air was also observed. The morphology of the oxidized porous-silicon is process dependent. AFM contrast was enhanced by selective wet chemical etching. Unusually fast oxide etching in BOE was observed. A possible oxide/PS model is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 466: Symposium G – Atomic Resolution Microscopy of Surfaces and Interfaces , 1996 , 63
Copyright
Copyright © Materials Research Society 1997

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References

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