Hostname: page-component-f554764f5-rvxtl Total loading time: 0 Render date: 2025-04-11T20:36:58.188Z Has data issue: false hasContentIssue false
  • English
  • Français

Critical Review of 1-Particle Models in Electromigration Resistance Change Modeling

Published online by Cambridge University Press:  22 February 2011

J. Niehof ,
H.C. de Graaff ,
A.J. Mouthaan  and
J.F. Verwey
J. Niehof
Affiliation:
MESA Research Institute, University of Twente, Dept. of Electrical Engineering, group ICE, P.O. Box 217, 7500 AE Enschede, The Netherlands
H.C. de Graaff
Affiliation:
MESA Research Institute, University of Twente, Dept. of Electrical Engineering, group ICE, P.O. Box 217, 7500 AE Enschede, The Netherlands
A.J. Mouthaan
Affiliation:
MESA Research Institute, University of Twente, Dept. of Electrical Engineering, group ICE, P.O. Box 217, 7500 AE Enschede, The Netherlands
J.F. Verwey
Affiliation:
MESA Research Institute, University of Twente, Dept. of Electrical Engineering, group ICE, P.O. Box 217, 7500 AE Enschede, The Netherlands
Get access

Abstract

An investigation is made into the capability of one-particle models in modeling electromigration-induced resistance changes. Analytically obtained solutions to the model equations are used to gain more insight into the vacancy distribution as a result of the applied boundary conditions. These solutions are then used to determine the resistance change modeling capabilities of three types of one-particle models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 465
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Niehof, J., Graaff, H.C. de, Verwey, J.F. in Materials Reliability in Microelectronics III, edited by Rodbell, K.P., Filter, W.F., Frost, H.J., Ho, P.S. (Mat. Res. Soc. Symp. Proc. 309, Pittsburgh, PA, 1993) pp. 295–300.Google Scholar
[2] Marcoux, P.J., Merchant, P.P., Naroditski, V., Rehder, W.D., Hewlett-Packard Journal, June 1989.Google Scholar
[3] Kirchheim, R., Kaeber, U., J. Appl. Phys., 70, 172, 1991.Google Scholar
[4] Madden, M., Marieb, T., Abratowski, E., Flinn, P.A. in Materials Reliability in Microelectronics II, edited by Thompson, C.V., Lloyd, J.R. (Mat. Res. Soc. Proc. 265, Pittsburgh, PA, 1992) pp. 33–38.Google Scholar
[5] Lloyd, J.R., Koch, R.H., Proc. IRPS, p. 161, 1987.Google Scholar
[6] Hinode, K., Furusawa, T., Homma, Y., Proc. IRPS, p. 205, 1992.Google Scholar
[7] Niehof, J., Flinn, P.A., Maloney, T.J., Proc. ESREF 92, pp. 359–362, 1992.Google Scholar
[8] Möckl, U., Diplom Arbeit Univ. Stuttgart/Max Planck Institute für Metallforschung, 1992.Google Scholar
[9] Niehof, J., PhD Thesis, University of Twente, The Netherlands, to be published October 1994.Google Scholar
[10] Kirchheim, R., Acta metall. mater., Vol 40, No 2, pp. 309–323, 1992.Google Scholar
[11] Wolbert, Ph.B.M., PhD Thesis, University of Twente, The Netherlands, 1991.Google Scholar
[12] Simmons, R.O., Balluffi, R.W., Phys. Rev., Vol 117, No 1, 1960.Google Scholar
[13] Liew, B.K., Fang, P., Cheung, N.W., Hu, C., Proc. IRPS, p. 111, 1990.Google Scholar