Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-25T18:55:49.953Z Has data issue: false hasContentIssue false
  • English
  • Français

Crack Nucleation in ion Beam Irradiated Magnesium Oxide and Sapphire Crystals

Published online by Cambridge University Press:  10 February 2011

V. N. Gurarie ,
D. N. Jamieson ,
R. Szymanski ,
A. V. Orlov  and
J. S. Williams
V. N. Gurarie
Affiliation:
School of Physics, MARC, University of Melbourne, Parkville VIC., 3052 Australia
D. N. Jamieson
Affiliation:
School of Physics, MARC, University of Melbourne, Parkville VIC., 3052 Australia
R. Szymanski
Affiliation:
School of Physics, MARC, University of Melbourne, Parkville VIC., 3052 Australia
A. V. Orlov
Affiliation:
School of Physics, MARC, University of Melbourne, Parkville VIC., 3052 Australia
J. S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, ANU, Canberra, 0200, Australia
Get access

Abstract

Monocrystals of magnesium oxide and sapphire have been subjected to ion implantation with 86 keV Si− ions to a dose of 5×1016 cm−2 and with 3 MeV H+ ions with a dose of 4.8×1017 cm−2 prior to thermal stress testing in a pulsed plasma. Fracture and deformation characteristics of the surface layer were measured in ion implanted and unimplanted samples using optical and scanning electron microscopy. Ion implantation is shown to modify the near-surface structure of samples by introducing damage, which makes crack nucleation easier under the applied stress. The effect of ion dose on the thermal stress resistance is investigated and the critical doses which produce a noticeable change in the stress resistance is determined for sapphire crystals implanted with 86 keV Si−. In comparison with 86 keV Si− ions the high energy implantation of sapphire and magnesium oxide crystals with 3 MeV H+ ions results in the formation of large-scale defects, which produce a low density crack system and cause a considerable reduction in the resistance to damage. Fracture mechanics principles are applied to evaluate the size of the implantation-induced microcracks which are shown to be comparable with the ion range and the damage range in the crystals tested. Possible mechanisms of crack nucleation for a low and high energy ion implantation are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 504: Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation… , 1997 , 283
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Gurarie, V.N., Williams, J.S. and Watt, A.J., J. Mat. Sci. and Eng., A189, p.319 (1994).Google Scholar
2. Gurarie, V. N. and Williams, J. S., J. of Mat. Res., 5, No. 6, 1257 (1990).Google Scholar
3. Hasselman, D.P.H., Mat. Sci. and Eng., 71, 251 (1985).Google Scholar
4. Hasselman, D.P.H. and Singh, J.P., Am. Cer. Soc. Bull., 58, No. 9, 856 (1979).Google Scholar
5. Richerson, D.W., Modem Ceramic Engineering, Marcel Derrer, Inc. Ch. 4.5 (1982)Google Scholar
6. Gurarie, V. N., Orlov, A.V. and Williams, J. S., Nucl. Instr. and Meth. in Phys. Res. B 127/128, 616–620 (1997)Google Scholar
7. Flinn, R.A. and Trojan, P.K., Eng. Mater. and Their Appl., Houghton Muffin Co., 2nd Ed, (1981)Google Scholar
8. Davidge, R.W. and Tappin, D., Trans. of Brit. Cer. Soc., 66, 8, 405 (1967).Google Scholar
9. Clarke, F.J.P., Tattersall, H.G. and Tappin, G., Proc. Brit. Cer. Soc., 6, 163 (1966).Google Scholar
10. Hague, J.R., Lynch, J.F., Rudnick, A., Holden, F.C., and Duckworth, W.H., In “Refractory Ceramics for Airospace”, Am. Cer. Soc., Inc. (1964).Google Scholar
11. Ashby, M.F. and Jones, D.R.H., Engineering Materials 2, Pergamon Press (1986)Google Scholar
12. Gurarie, V.N., Jamieson, D.N., Williams, J.S., J. Appl. Phys. (to be submitted).Google Scholar
13. Wong-Leung, J., Nygren, E. and Williams, J.S., Appl. Phys. Lett. 68,417 (1995)Google Scholar
14. Johnson, P.B., Reader, K.L., Thomson, R.W., J. of Nuclear Mater., 231 (1–2), 92, Jul (1996).Google Scholar
15. Hishmeh, G.A., Cartz, L., Desage, F., Templier, C., Desoyer, J.C., Birtcher, R.C., J. Mat. Res. 9(12), 3095–3107 (1994).Google Scholar