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Coupled Two Dimensional Electron Gas Structures in the G1−xAlxAs/GaAs System

Published online by Cambridge University Press:  26 February 2011

A. Christou ,
Z. Hatsopoulos ,
N. Bacalis ,
N. Papanicholaou  and
A. Ginoudi
A. Christou
Affiliation:
Naval Research Laboratory, Washington D.C.
Z. Hatsopoulos
Affiliation:
Research Center of Crete and University of Crete, Heraklio Crete, Greece
N. Bacalis
Affiliation:
Research Center of Crete and University of Crete, Heraklio Crete, Greece
N. Papanicholaou
Affiliation:
Naval Research Laboratory, Washington D.C.
A. Ginoudi
Affiliation:
Research Center of Crete and University of Crete, Heraklio Crete, Greece
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Abstract

Two 2-dimensional electron gas (DEG) regions coupled either by a superlattice, an undoped GaAs layer, or the combination of a tunneling barrier with a superlattice have been investigated by studying (a) non-ohmic conduction, (b) field effect characteristics parallel to the 2DEG channels and (c) negative differential resistance (NDR) for conduction perpendicular to the quantum wells. It is shown that coupling is optimized when the separation region is a superlattice. Tunneling through superlattice mini-bands can enhance field effect transistor transconductance.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 443
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Okumura, H., Misawa, S., Yoshida, S. and Gonda, S., Appl. Phys. Lett. 46, 377 (1985).CrossRefGoogle Scholar
2. Drammond, T.J., Kopp, W., Keever, M., Morkoc, H. and Cho, A.Y., J. Appl. Phys. 53, 1023 (1982).CrossRefGoogle Scholar
3. Saito, J., Naubu, K., Ishikawa, T. and Hiyamizu, S., Japan J. Appl. Phys. 22, 179 (1983).CrossRefGoogle Scholar
4. Pinczuk, A., Shah, J., Miller, R.C., Gossard, A.C., and Wiegmann, W., Solid State Common. 50, 735 (1984).CrossRefGoogle Scholar
5. Esaki, L. and Chang, L.L., Phys. Rev. Lett. 33, 495 (1974)CrossRefGoogle Scholar
6. Calecki, D., Palmier, J.F. and Chomette, A., J. Phys. C 17, 5017 (1984).CrossRefGoogle Scholar