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Correlations and Ordering in (GaSb)1−xGe2x Alloys

Published online by Cambridge University Press:  26 February 2011

Kathie E. Newman ,
Bing-Lin Gu  and
P. A. Fedders
Kathie E. Newman
Affiliation:
Physics Department, University of Notre Dame, Notre Dame, Indiana 46556.
Bing-Lin Gu
Affiliation:
Physics Department, Tsinghua University, Beijing, The People's Republic of China (current address).
P. A. Fedders
Affiliation:
Physics Department, Washington University at St. Louis, St. Louis, Missouri 63130.
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Abstract

The semiconducting alloy (GaSb)1−x Ge2x is an example of a mixed crystalline alloy that undergoes a phase transition between its constituent crystal types. The order-disorder transition modifies both the long-range and short-range order in the alloy as a function of composition x. By using the Kikuchi approximation, the bond probabilities are calculated and then compared with EXAFS data. These calculations show that the EXAFS data are consistent with the existence in (GaSb)1−x Ge2x of “wrong” bonds of Ga-Ga and Sb-Sb. The theory also predicts a violation of Vegard's Law for the behavior of the mean bond length as a function of composition x.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 59
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Greene, J. E., J. Vac. Sci. Technol. Bl, 229 (1983);Google Scholar
Zilko, J. L. and Greene, J. E., J. Appl. Phys. 51, 1549 (1980); 51, 1560 (1980);Google Scholar
Cadien, K. C., Eltoukhy, A. H., and Greene, J. E., Appl. Phys. Lett. 38, 773 (1981); andGoogle Scholar
Barnett, S. A., Kramer, B., Romano, L. T., Shah, S. I., Ray, M. A., Fang, S., and Greene, J. E., in Layered Structures. Epitaxy, and Interfaces, ed. Gibson, J. M. and Dawson, L. R. (North Holland Publishing Co., Amsterdam, 1984).Google Scholar
2. Alferov, Z. I., Vartanyan, R. S., Korol'kov, V. I., Mokan, I. I., Ulin, V. P., Yavich, B. S., and Yakovenko, A. A., Fiz. Tekh. Poluprovodn. 16, 887 (1982) [English transi: Sov. Phys. Semiconductors 16, 567 (1982).]Google Scholar
3. Newman, K. E., Lastras-Martinez, A., Kramer, B., Barnett, S. A., Ray, M. A., Dow, J. D., Greene, J. E., and Raccah, P. M., Phys. Rev. Lett. 50, 1466 (1983).Google Scholar
4. Newman, K. E. and Dow, J. D., Phys. Rev. B27, 7495 (1983).Google Scholar
5. Newman, K. E., Dow, J. D., Bunker, B. A., Abels, L. L., Raccah, P. M., Ugur, S., Xue, D. Z., Barnett, S. A., Greene, J. E., Ray, M. A., Kramer, B., Shah, I., and Kobayashi, A., Phys. Rev. B, to be published.Google Scholar
6. Shah, S'. I., Kramer, B., Barnett, S. A., and Greene, J. E., J. Appl. Phys. 59, 1482 (1986).Google Scholar
7. Barnett, S. A., Ray, M. A., Lastras, A., Kramer, B., Greene, J. E., Raccah, P. M., and Abels, L. L., Electron. Lett. 18, 891 (1982). Typographical errors in the plot the direct band gap of (GaAs)1−x Ge2x versus composition x have been corrected in Ref.[3].Google Scholar
8. Krabach, T. N., Wada, N., Klein, M. V., Cadien, K. C., and Greene, J. E., Solid State Commun. 45, 895 (1983);Google Scholar
Beserman, R., Greene, J. E., Klein, M. V., Krabach, T. N., McGlinn, T. C., Romano, L. T., and Shah, S. I., Proc. 17-th Internati. Conf. Phys. Semiconductors, San Francisco, 1984, ed. Chadi, D. J. (Springer-Verlag, 1985) p. 961.Google Scholar
9. Kobayashi, A., Newman, K. E., and Dow, J. D., Phys. Rev. B32, 5312 (1985).Google Scholar
10. Newman, K. E., Dow, J. D., Kobayashi, A., and Beserman, R., Solid State Commun. 56, 553 (1985).Google Scholar
11. See, for example, Ma, S.-K., Modern Theory of Critical Phenomena, W. A. Benjamin, Inc., Reading, Massachussetts, 1976.Google Scholar
12. D'yankovov, M. I. and Raikh, M. E., Fiz. Tekh. Poluprovodn. 16, 890 (1982) [English transi: Sov. Phys. Semiconductors 16, 570 (1982).]Google Scholar
13. Holloway, H. and Davis, L. C., Phys. Rev. Lett. 53, 1510 (1984).CrossRefGoogle Scholar
14. Kim, K. and Stern, E. A., Phys. Rev. B32, 1019 (1985).Google Scholar
15. Davis, L. C. and Holloway, H., unpublished.Google Scholar
16. Holloway, H. and Davis, L. C., unpublished.Google Scholar
17. Koiller, B., Davidovich, M. A., and Osorio, R., Solid State Commun. 55, 861 (1985).Google Scholar
18. Gu, B.-L., Newman, K. E., and Fedders, P. A., unpublished.Google Scholar
19. Stern, E. A., Ellis, F., Kim, K., Romano, L., Shah, S. I., and Greene, J. E., Phys. Rev. Lett. 54, 905 (1985).Google Scholar
20. Raikh, M. E. and Umanskii, V. E., Fiz. Tekh. Poluprovodn. 16, 2011 (1982) [English transi: Sov. Phys. Semicond. 16, 1298 (1983)].Google Scholar
21. Kikuchi, R., J. Chem. Phys. 60, 1071 (1974).Google Scholar
22. Blume, M., Emery, V. J., and Griffiths, R. B., Phys. Rev. A4, 1071 (1971).Google Scholar
23. Mikkelsen, J. C. and Boyce, J. B., Phys. Rev. Lett. 49, 1412 (1982).Google Scholar
24. The Periodic Table of the Elements, Sargent-Welch Scientific Company.Google Scholar