Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-26T21:41:08.131Z Has data issue: false hasContentIssue false
  • English
  • Français

Correlation of Surface Morphologies with Mn Compositions of Ga1-xMnxAs Epilayers Grown by Liquid Phase Epitaxy

Published online by Cambridge University Press:  01 February 2011

Hwa-Mok Kim ,
Jae-Hyeon Leem ,
Sung Woo Choi ,
Deuk Young Kim  and
Tae-Won Kang
Hwa-Mok Kim
Affiliation:
Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
Jae-Hyeon Leem
Affiliation:
Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
Sung Woo Choi
Affiliation:
Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
Deuk Young Kim
Affiliation:
Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
Tae-Won Kang
Affiliation:
Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
Get access

Abstract

In this letter, we investigated the correlation between as-grown surface morphologies and Mn compositions of Ga1-xMnxAs epilayers - a III-V diluted magnetic semiconductor - grown by liquid phase epitaxy (LPE). Ga1-xMnxAs epilayers were grown at 595 °C from 50 % Ga + 50 % Bi mixed solvent. The grown layers were characterized by energy dispersive x-ray analysis (EDS) and atomic forced microscopy (AFM). The Mn composition measured by EDS after growth process was varied from 1 to 7 %. As increasing Mn composition surface morphologies of as-grown Ga1-xMnxAs epilayers were varied. At higher Mn compositions, the morphology of the surface layers degrades strongly, preventing removal of the solution-melt from it. Key words: LPE, as-grown, surface morphology, Mn composition, Ga1-xMnxAs, energy-dispersive x-ray analysis (EDS), atomic forced microscopy (AFM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.22
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Furdyna, J. K., J. Appl. Phys. 64, R29 (1988).Google Scholar
2. Munekata, H. et al., Phys. Rev. Lett., 63, 1849 (1989)Google Scholar
3. Frank, F. C., Growth and Perfection of Crystals (Wiley, New York, 1958), 3.Google Scholar
4. Hsu, C. C., Wong, T. K. S., and Wilson, I. H., Appl. Phys. Lett., 63, 1839 (1993)Google Scholar
5. Waite, W. M. and Goos, G., Compiler Construction (Springer-Verlag, New York, 1987), 398.Google Scholar
6. Brater, C. B. and Strausser, Y. E., Inst. Phys. Conf. Ser., 135, 69 (1994)Google Scholar
7. Burton, W. K., Cabrera, N., and Frank, F. C., Philos. Trans. R. Soc. London, 243, 299 (1951)Google Scholar
8. Hsu, C. C., Xu, J. B., Wilson, I. H., and Wang, S. M., Appl. Phys. Lett., 66, 604 (1995)Google Scholar