Hostname: page-component-669899f699-b58lm Total loading time: 0 Render date: 2025-05-06T01:16:51.902Z Has data issue: false hasContentIssue false
  • English
  • Français

Correlation of Structure and Properties of Silicon Devices

Published online by Cambridge University Press:  15 February 2011

R. B. Marcus
R. B. Marcus*
Affiliation:
Bell LaboratoriesMurray Hill, New Jersey 07974
Get access

Abstract

Three types of structure-related problems in VLSI materials and the impact of these problems on device properties are discussed: substrate defects and device leakage/breakdown, metallization linewidth and device failure, and SiO2/polysilicon interface texture and device leakage/breakdown. In many cases transmission electron microscopy is the major source of information on structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 441
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Sheng, T. T. and Marcus, R. B., J. Electrochem. Soc. 127 737 (1980).CrossRefGoogle Scholar
[2] Ravi, K. V., Imperfections and Impurities in Semiconductor Silicon, Wiley, 1981.Google Scholar
[3] Donolato, C., in Johari, O., Ed., Scanning Electron Microscopy/1979, IITRI, Chicago, 1979, vol. 2, p. 257.Google Scholar
[4] Lin, P. S. D. and Leamy, H., to be published.Google Scholar
[5] Lin, P. S. D., Marcus, R. B. and Sheng, T. T., to be published in J. Electrochem Soc.Google Scholar
[6] Dishman, J. M., Haszko, S. E., Marcus, R. B., Murarka, S. P. and Sheng, T. T., J. Appl. Phys., 50, 2689 (1979).CrossRefGoogle Scholar
[7] Blumtritt, H., Gleichman, R., Heydenreich, J. and Johansen, H., Phys. Status Solidi., (a) 55, 611, (1979).CrossRefGoogle Scholar
[8] Marcus, R. B., Robinson, M., Sheng, T. T., Haszko, S. E. and Murarka, S., J. Electrochem Soc., 124, 425, (1977).CrossRefGoogle Scholar
[9] Black, J. R., Proc. 16th Annual Reliability Physics Symposium, New York, 1978, p. 233.Google Scholar
[10] Vaidya, S., Fraser, D. B. and Sinha, A. K., Proc. 18th Annual Reliability Physics Symposium, Las Vegas, 1980, p. 165.Google Scholar
[11] d'Heurle, F. M. and Ho, P. S., in Poate, J. M., Tu, K. N. and Mayer, J. W., Eds., Thin Films - Outerdiffusion and Reactions, Wiley, New York, 1978, p. 243.Google Scholar
[12] Clemens, J. and Locke, K., Bell Laboratories, private communication.Google Scholar
[13] Vaidya, S. and Sinha, A. K., Proc. 20th Annual Reliability Physics Symposium, San Diego, 1982, p. 50.Google Scholar
[14] Irene, E. A., Tierney, E. and Doug, D. W., Journ. Electrochem. Soc., 127, 705 (1980).CrossRefGoogle Scholar
[15] DiMaria, D. J. and Kerr, P. R., Appl. Physics. Lett., 27, 505 (1975).CrossRefGoogle Scholar
[16] Marcus, R. B., Sheng, T. T., and Lin, P., J. Electrochem. Soc. 129, 1282 (1982).CrossRefGoogle Scholar
[17] Marcus, R. B. and Sheng, T. T., Journal Electrochem. Soc., 129 1278 (1982).CrossRefGoogle Scholar