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Correlation of Stress With Photo-Degradation in Hydrogenated Amorphous Silicon Prepared by Hot-Wire CVD

Published online by Cambridge University Press:  10 February 2011

Daxing Han ,
Tamihiro Gotoh ,
Motoi Nishio ,
Tomonari Sakamoto ,
Shuichi Nonomura ,
Shoji Nitta ,
Qi Wang  and
Eugene Iwaniczko
Daxing Han
Affiliation:
Dept of Physics & Astronomy, Univ of North Carolina, Chapel Hill, NC 27599–3255, USA
Tamihiro Gotoh
Affiliation:
Dept of ECE, Gifu Univ, 1–1 Yanagido, Gifu 501–11, Japan
Motoi Nishio
Affiliation:
Dept of ECE, Gifu Univ, 1–1 Yanagido, Gifu 501–11, Japan
Tomonari Sakamoto
Affiliation:
Dept of ECE, Gifu Univ, 1–1 Yanagido, Gifu 501–11, Japan
Shuichi Nonomura
Affiliation:
Dept of ECE, Gifu Univ, 1–1 Yanagido, Gifu 501–11, Japan
Shoji Nitta
Affiliation:
Dept of ECE, Gifu Univ, 1–1 Yanagido, Gifu 501–11, Japan
Qi Wang
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA.
Eugene Iwaniczko
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA.
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Abstract

An innovative bending-beam method is used to study the stress of thin film a-Si:H deposited on thin quartz by hot-wire chemical vapor deposition (CVD) techniques. When the deposition temperature increases from 280 to 440 °C the hydrogen content decreases from 8 to <1 at.%, and the initial compressive stress also decreases from 420 to 74 MPa. We found that there is a 10−4 photo-induced increase of the initial compressive stress under 300 mW/cm2 light-soaking, which can be recovered to the initial value by thermal annealing at 160 °C for 1 h. The results imply that the Si-H bonds contribute to the compressive stress in the a-Si:H film. There is no simple correlation between the stress and the photodegradation of the electronic properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 445
Copyright
Copyright © Materials Research Society 1998

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References

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