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Correlation of Size and Photoluminescence for Ge Nanocrystals in SiO2 Matrices

Published online by Cambridge University Press:  28 February 2011

C.M Yang ,
K.V. Shcheglov ,
M.L. Brongersma ,
A Polman  and
H.A. Atwater
C.M Yang
Affiliation:
California Institute of Technology, Pasadena, CA 91125
K.V. Shcheglov
Affiliation:
California Institute of Technology, Pasadena, CA 91125
M.L. Brongersma
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
A Polman
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
H.A. Atwater
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

Synthesis and size-dependent photoluminescence has been performed for Ge nanocrystals in SiO2 matrices with average diameters between 2 nm and 9 nm, formed by room temperature ion implantation into SiO2 followed by precipitation during vacuum thermal anneals. Nanocrystal size distributions obtained from electron microscopy data were used in conjunction with a quantum-confined exciton recombination model[l] to generate calculated photoluminescence spectra, which were compared with experimental spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 181
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Takagahara, T. and Takeda, K., Phys. Rev., B46, 15578 (1992).Google Scholar
2 Canham, L.T., Appl. Phys. Lett., 57, 1046 (1990).Google Scholar
3 Delley, B. and Stegmeier, E.F., Phys. Rev., B47, 1397 (1993).Google Scholar
4 Heath, J., Shiang, J.J., and Alivisatos, A.P., J. Chem. Phys. 101, 1607 (1994).Google Scholar
5 Saito, Y., J. Cryst. Growth, 47, 61 (1979).Google Scholar
6 Maeda, Y., Tsukamoto, N., Yazawa, Y., Kanemitsu, Y., and Masumoto, Y., Appl. Phys. Lett., 59, 3168 (1991).Google Scholar
7 Hayashi, S., Kanzawa, Y., Kataoka, M., Nagareda, T., and Yamamoto, K., Z. Phys. D26, 144 (1993).Google Scholar
8 Hayashi, S., Fijii, M., Yamamoto, K., Jpn. J. Appl. Phys., 28, 1464 (1989).Google Scholar
9 Atwater, H.A., Shcheglov, K.V., Wong, S.S., Vahala, K.J., Flagan, R.C., Brongersma, M.L. and Polman, A., Mat. Res. Soc. Symp. Proc. 316, 409 (1994).Google Scholar