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Correlation of Electric Parameters Change and Structural Changes Induced in Silicon Systems by Pulsed Magnetic Field Treatment

Published online by Cambridge University Press:  21 February 2011

Mark N. Levin  and
Vladimir M. Maslovsky
Mark N. Levin
Affiliation:
Voronezh State University, Voronezh 394693, Russia
Vladimir M. Maslovsky
Affiliation:
Zelenograd Research Institute of Physical Problems, Moscow 103460, Russia
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Abstract

The results of comparison investigations of structural and electric parameters changes in silicon systems induced by pulsed magnetic field (MF) treatment (PMFT) are presented for the first time. The characteristics of (PMFT) that can induce considerable parameters changes of the silicon system were determined. Amplitudc of thc magnctic impulscs is 0.1-0.3 MA/m and duration of thc impulscs is 10-30 ms. The investigations were carried out by means of scanning electron microscope (SEM), X-ray diffraction analysis, C-V and DLTS spectroscopies. The PMFT induces the generation of A-centers in the near-surface region of silicon, the changes of the crystal lattice parameter and the concentration of free electrons and results in emergence of an extent structural microdefects in subsurface. The obtained experimental data testifies that PMFT is possible to increase the vacancy concentration at subsurface region of silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 429
Copyright
Copyright © Materials Research Society 1994

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References

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