Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-06T13:02:14.629Z Has data issue: false hasContentIssue false
  • English
  • Français

Correlation of Defects on Dielectric Surfaces with Large Particle Counts in Chemical-Mechanical Planarization (CMP) Slurries Using a New Single Particle Optical Sensing (SPOS) Technique

Published online by Cambridge University Press:  01 February 2011

Edward E. Remsen ,
Sriram P. Anjur ,
David Boldridge ,
Mungai Kamiti  and
Shoutian Li
Edward E. Remsen
Affiliation:
Cabot Microelectronic Corporation 870 North Commons Drive Aurora, IL 60504, U.S.A.
Sriram P. Anjur
Affiliation:
Cabot Microelectronic Corporation 870 North Commons Drive Aurora, IL 60504, U.S.A.
David Boldridge
Affiliation:
Cabot Microelectronic Corporation 870 North Commons Drive Aurora, IL 60504, U.S.A.
Mungai Kamiti
Affiliation:
Cabot Microelectronic Corporation 870 North Commons Drive Aurora, IL 60504, U.S.A.
Shoutian Li
Affiliation:
Cabot Microelectronic Corporation 870 North Commons Drive Aurora, IL 60504, U.S.A.
Get access

Abstract

A dual-sensor single particle optical sensing method (SPOS) is described for the measurement of the large particle count (LPC) in fumed silica polishing slurries. LPC values were expressed on a silica sphere-equivalent diameter scale rather than a polystyrene latex-equivalent size basis. Linear correlations between LPC and scratch counts on SiO2 surface films for wafers polished under clean room and table-top CMP conditions are demonstrated. However, these correlations were obtained for a limited set of model slurries; and further investigation will be needed to assess the general applicability of dual-sensor SPOS for oxide scratch defect prediction in CMP slurries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 867: Symposium W – Chemical-Mechanical Planarization-Integration, Technology and Reliability , 2005 , W4.2
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Steigerwald, J.M., Murarka, S.P., and Gutmann, R.J., Chemical-Mechanical Planarization of Microelectronic Materials (John-Wiley & Sons, New York, 1997) pp. 36 and 281.Google Scholar
2. Ahn, Y., Yoon, J.Y., Baek, C.W., and Kim, Y.K., Wear 257, 785 (2004).Google Scholar
3. Singh, R. and Bajaj, R., MRS Proceedings 27, 743 (2002).Google Scholar
4. Anthony, L., Miner, J., Baker, M., Lai, W., Sowell, J., Maury, A., and Obeng, Y., Proc. Electrochem. Soc. 8, 181 (1998).Google Scholar
5. Kuntzsch, T., Witnik, U., Hollatz, M., Stintz, M., and Ripperger, S., Chem. Eng. Tech. 12, 1235 (2003).Google Scholar
6. Nicoli, D., O'Hagan, P., Pokrajac, G. and Hasapidis, K., Amer. Lab. 32, 18 (2000).Google Scholar
7. Hanus, L.H., Battafarano, S.A., and Wank, A.R., MICRO 21, 71 (2003).Google Scholar
8. Bare, J.P. and Lemke, T.A., MICRO 15, 53 (1997).Google Scholar
9. Nicholes, K., Litchy, M.R., Hood, E., Easter, W.G., Bhethanabotla, V.R., Cheema, L. and Grant, D.C., Proceedings of the 8th CMP-MIC Conference, pp. 221–224, (2003).Google Scholar