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Correlation Between the AlN Buffer Layer Thickness and the GaN Polarity in GaN/AlN/Si(111) Grown by MBE

Published online by Cambridge University Press:  11 February 2011

A. M. Sanchez ,
P. Ruterana ,
P. Vennegues ,
F. Semond ,
F. J. Pacheco ,
S. I. Molina ,
R. Garcia ,
M. A. Sanchez-Garcia  and
E. Calleja
A. M. Sanchez*
Affiliation:
ESCTM-CRISMAT, UMR6508-CNRS, ISMRA. 6, Boulevard Maréchal Juin, 14050 Caen Cedex, France
P. Ruterana
Affiliation:
ESCTM-CRISMAT, UMR6508-CNRS, ISMRA. 6, Boulevard Maréchal Juin, 14050 Caen Cedex, France
P. Vennegues
Affiliation:
CRHEA-CNRS, B. Grégory, 06560 Valbonne, France
F. Semond
Affiliation:
CRHEA-CNRS, B. Grégory, 06560 Valbonne, France
F. J. Pacheco
Affiliation:
Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz. Apdo. 40 E-11510 Puerto Real (Cadiz), Spain
S. I. Molina
Affiliation:
Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz. Apdo. 40 E-11510 Puerto Real (Cadiz), Spain
R. Garcia
Affiliation:
Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz. Apdo. 40 E-11510 Puerto Real (Cadiz), Spain
M. A. Sanchez-Garcia
Affiliation:
Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica, Apdo. 28040 Madrid, Spain
E. Calleja
Affiliation:
Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica, Apdo. 28040 Madrid, Spain
*
• Corresponding author, Tel. +33 2 31 45 26 53, Fax. +33 2 31 45 26 60, e-mail: [email protected]
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Abstract

In this work it is shown that thin AlN buffer layers cause N-polarity GaN epilayers, with a high inversion domains density. When the AlN thickness increases, the polarity of the epilayer changes to Ga. The use of a low temperature AlN nucleation layer leads to a flat AlN/Si(111) interface. This contributes to decrease the inversion domains density in the overgrown GaN epilayer with a Ga polarity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.25
Copyright
Copyright © Materials Research Society 2003

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References

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