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Copper Film Deposition Using H and O Atoms

Published online by Cambridge University Press:  25 February 2011

Judith Ann Halstead ,
Peter S. Locke  and
Robert R. Reeves
Judith Ann Halstead
Affiliation:
Department of Chemistry and Physics, Skidmore College, Saratoga Springs, NY 12866
Peter S. Locke
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180
Robert R. Reeves
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

The formation of thin copper films by H-atom reaction with Cu(FOD)2 and Cu(HFA)2 has been demonstrated at near room temperature. Oxygen atoms have now also been reacted with these β-diketonate copper complexes, producing films of copper oxide which can be readily reduced by subsequent treatment with H-atoms. The thin copper films produced are conductive and highly adherent. The oxygen atom reaction with the copper complex produces a visible chemiluminescent glow, yielding information on the nature of the reaction process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 647
Copyright
Copyright © Materials Research Society 1992

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