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Copper Film Deposition Using H and O Atoms

Published online by Cambridge University Press:  25 February 2011

Judith Ann Halstead ,
Peter S. Locke  and
Robert R. Reeves
Judith Ann Halstead
Affiliation:
Department of Chemistry and Physics, Skidmore College, Saratoga Springs, NY 12866
Peter S. Locke
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180
Robert R. Reeves
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

The formation of thin copper films by H-atom reaction with Cu(FOD)2 and Cu(HFA)2 has been demonstrated at near room temperature. Oxygen atoms have now also been reacted with these β-diketonate copper complexes, producing films of copper oxide which can be readily reduced by subsequent treatment with H-atoms. The thin copper films produced are conductive and highly adherent. The oxygen atom reaction with the copper complex produces a visible chemiluminescent glow, yielding information on the nature of the reaction process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 647
Copyright
Copyright © Materials Research Society 1992

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References

1. Van Hemert, R. L., Spendlove, L. B. and Sievers, R. B., J. Electrochem. Soc., 112, 1123(1965).Google Scholar
2. Kaloyeros, A. E., Feng, A., Garhart, J., Brooks, K. C., Gosh, S. K., Saxena, A. N. and Luethrs, F., J. Electronic Mat., 19, 271 (1990).Google Scholar
3. Lai, W. G., Xie, Y. and Griffin, G. L., J. Electrochem. Soc., 138, 3499 (1991).Google Scholar
4. Armitage, D. N., Dunhill, N. I., West, R. H. and Williams, J. O., J. Crystal Growth, 108, 683 (1991).Google Scholar
5. Temple, D. and Reisman, A., J. Electrochem. Soc., 136, 3525 (1989).Google Scholar
6. Kaloyeros, A. E., Dettelbacher, C., Eisenbraun, E. T., Lanford, W. A., Li, H., Olowolafe, J. F., Murarka, S., Pintchovski, F., Sky, Y. and Toscano, P. J., Mat. Ros. Soc. Symp. Proc., 1991 Spring Meeting.Google Scholar
7. Jain, A., Chi, K. M., Kodas, T. T., Hampden-Smith, M. J., Fair, J. D., and Paffett, M. F., Chem. Mater., 3, 995 (1991).Google Scholar
8. Cohen, S. L., Liehr, M. and Kasi, S., Appl. Phys. Lett., 60, 50 (1992).Google Scholar
9. Brecelj, F. and Mozetic, M., Vacuum, 40, 177 (1990).CrossRefGoogle Scholar
10 Li, H. and Reeves, R.R., Mat. Res. Soc. Symp. Proc., 203, 341 (1991).Google Scholar