Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-07T20:24:18.724Z Has data issue: false hasContentIssue false
  • English
  • Français

Copper Film Deposition by Hydrogen Atom Reactions with Copper Compounds

Published online by Cambridge University Press:  25 February 2011

Hongwen Li  and
Robert R. Reeves
Robert R. Reeves
Affiliation:
Rensselaer Polytechnic Institute, Chemistry Department Troy, NY 12180
Get access

Abstract

A novel low temperature CVD process - atom reaction CVD process for metal film depositions has been developed by using hydrogen atoms reacting with metal compounds. High purity copper films, with low resistivity of ∼ 2 μΩ cm, good step coverage to submicron holes and good adhesion to various substrates, were obtained by using this process with Cu(HFA)2 source at substrate temperatures below 150 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 341
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hess, D.W., Gorczyca, T.B. and Gorowitz, B., in VLSI Electronics, Vol. 8, edited by Einspruch, N.G. and Brown, D.M., (Academic, 1984), Chapter 3, 4.Google Scholar
2. Smith, D.C., Pattillo, S.G. et al. , presented at MRS 1989 Fall Meeting, Boston, MA, (1989).Google Scholar
3. Lee, W. and Reeves, R.R., presented at AVS 37th Annual Symposium, Toronto, Ontario, 1990 (unpublished).Google Scholar
4. Kerney, K.M., Semiconductor International, March, 66-68 (1989).Google Scholar
5. Schwartz, G.C. and Schaible, P.M., J. Electrochem. Soc. 130 (8) 1778 (1983).Google Scholar
6. Li, Hongwen, Metal Film Deposition by Hydrogen Atom Reactions with Metal Compounds, Ph.D Thesis, RPI, 1990.Google Scholar
7. Temple, D. and Reisman, A., J. Electrochem. Soc. 136 (11) 3525–3529 (1989).Google Scholar
8. Oehr, C. and Suhr, H., Appl. Phys. A 45 151–154 (1988).Google Scholar