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Controlled Temperature Coefficient of Dielectric Constant Through Phase Transformation in (Ba, Sr)(Mg1/3Ta2/3)O3

Published online by Cambridge University Press:  15 February 2011

T. Nagai
Affiliation:
Synergy Ceramics Lab., Fine Ceramics Research Association, 1–1 Hirate-cho, Kita-ku, Nagoya 462, Japan, [email protected]
M. Sugiyama
Affiliation:
Advanced Materials & Technology Research Lab., Nippon Steel Corporation, 20–1 Shintomi, Futtsu, Chiba 293, Japan
M. Sando
Affiliation:
National Industrial Research Institute of Nagoya, AIST / MITI, 1–1 Hirate-cho, Kita-ku, Nagoya 462, Japan
K. Niihara
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8–1, Ibaraki, Osaka 567, Japan
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Abstract

A structural phase transformation from hexagonal to monoclinic has been found in an ordered perovskite compound (Ba, Sr)(Mg1/3Ta2/3)O3, (BSMT). The transformation temperature of BSMT increases and the dielectric constant also changes from 24 to 27 with an increase in Sr concentration. The temperature coefficient of the dielectric constant is also changed with the variation of Sr content. In order to apply BSMT for practical use of dielectric resonators these changes in the dielectric properties, which is dominated by the phase transformation, must be controlled. In order to clarify the relation between the dielectric constant change and the structural phase transformation, phonon mode of BSMT has been studied using Raman spectroscopy. Change in the Raman spectrum of BSMT is classified into four steps. The first and the fourth steps correspond to the phase transformation. The change in the phonon mode detected by Raman spectroscopy is discussed in connection with the structural change.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Nagai, T., Inuzuka, T. and Sugiyama, M., Jpn. J. Appl. Phys. 31, p. 3132 (1992).Google Scholar
2. Sugiyama, M. and Nagai, T., Jpn. J. Appl. Phys. 32, p. 4360 (1993).Google Scholar
3. Nagai, T. and Sugiyama, M. in Advanced Materials '93 I /B, edited by Homma, M. et al. (Trans. Mat. Res. Soc. Jpn. 14B, Tokyo, Japan 1993), p. 1735.Google Scholar
4. Colla, E. L., Reaney, I. M. and Setter, N., Ferroelectrics 133, p. 217 (1992).Google Scholar
5. Colla, E. L., Reaney, I. M. and Setter, N.: J. Appl. Phys. 74, p. 3414 (1993).Google Scholar
6. Steiner, O., Colla, E. L., Reaney, I. M. and Setter, N. in Third EURO-CERAMICS, edited by Duran, P. and Fernandez, J. F., (Madrid, Spain 1993) v. 2, p. 223.Google Scholar
7. Nagai, T., Sugiyama, M., Sando, M. and Niihara, K., Jpn. J. Appl. Phys. [in contribution].Google Scholar
8. Nagai, T., Sugiyama, M., Sando, M. and Niihara, K., Jpn. J. Appl. Phys. 35, p. 5163 (1996).Google Scholar