Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T09:17:39.870Z Has data issue: false hasContentIssue false
  • English
  • Français

Control of the Intermixing of InGaAs/InGaAsP Quantum Well in Impurity Free Vacancy Disordering by Changing NH3 Flow Rate During the Growth of SiNx Capping Layer

Published online by Cambridge University Press:  10 February 2011

W.J. Choi ,
H.T Yi ,
D.H. Woo ,
S. Lee ,
S.H. Kim ,
K.N. Kang  and
J. Cho
W.J. Choi
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130-650, Korea, [email protected]
H.T Yi
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130-650, Korea
D.H. Woo
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130-650, Korea
S. Lee
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130-650, Korea
S.H. Kim
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130-650, Korea
K.N. Kang
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130-650, Korea
J. Cho
Affiliation:
Electro-Physics Dept., Kwangwoon Univ., 447-1 Wolgae-Dong, Nowon-Gu, Seoul 139-701, Korea
Get access

Abstract

The dependence of impurity free vacancy disordering (IFVD) of InGaAs/InGaAsP QW structure on the characteristics of dielectric capping layer was studied using SiNx film as capping layers. The characteristics of the SiNx capping layer were varied by changing the NH3 flow rate during SiNx deposition by plasma enhanced chemical vapor deposition (PECVD). The degree of quantum well intermixing (QWI) with SiNX capping layer grown at higher NH3 flow rate was larger than that with SiNx film grown at lower NH3 flow rate. This implies that QWI can be easily controlled by simply changing the reactive gas ratio in the growing process of SiN, capping layer. It was also shown that this method to control QWI is better than the method of using two different capping layers such as SiNx film and SiO2 film in order to get spatially selective QWI on the same substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 515
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Ribot, H., Lee, K. W., Simes, R. J., Yan, R. H. and Coldren, L. A., Appl. Phys. Lett. 55, 672 (1989).Google Scholar
[2] Miyazawa, T., Iwamura, H., and Naganuma, M., IEEE Photon. Technol. Lett. PTL-3, 421 (1991).Google Scholar
[3] Suzuki, Y., Iwamura, H., Miyazawa, T., and Mikami, O., Appl. Phys. Lett., 57, 2745 (1990)Google Scholar
[4] Beauvais, J., Ayling, G. S., and Marsh, J. H., IEEE Photon. Technol. Lett. PTL-4, 372 (1993).Google Scholar
[5] Gontijo, I., Krauss, T., Marsh, J.H. and Rue, R. M. De La, IEEE J. of Quantum Electron. QE-30, 1189 (1994).Google Scholar
[6] Allen, E. L., Pass, C. J., Deal, M. D., Plummer, J. D. and Chia, V. F. K., Appl. Phys. Lett. 59, 3252 (1991).Google Scholar
[7] Choi, W. J., Lee, J. I., Han, I. K., Kang, K. N., Kim, Y., Park, H. L. and Cho, K., J. Mat. Sci. Lett. 13, 326 (1994).Google Scholar
[8] Choi, W. J., Lee, S., Zhang, J., Kim, Y., Kim, S. K., Lee, J. I., Kang, K. N. and Cho, K.,Jpn. J. Appl. Phys. 34, L418 (1995).Google Scholar
[9] Choi, W. J. et al. , IEEE J. of Sel. Topics in Quantum Electron., 4, 624, (1998)Google Scholar
[10] Choi, W. J. et al. Appl. Phys. Lett., 67, 3438 (1995)Google Scholar
[11] Han, I. K., Lee, Y. J., Jo, J. W., Lee, J. I. and Kang, K. N., Appl. Surf. Sci. 48/49, 104 (1991).Google Scholar
[12] Dun, H., Pan, P., White, F. R. and Douse, R. W., J. Electrochem. Soc. 128, 1555 (1981).Google Scholar
[13] Kapoor, Vikram J., Bailey, Robert S. and Stein, Herman J., J. Vac. Sci. Technol. Al, 660 (1983).Google Scholar