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Control of Point Defects in Semiconductors

Published online by Cambridge University Press:  16 February 2011

Yuri Y. Loginov ,
Paul D. Brown  and
Colin J. Humphreys
Yuri Y. Loginov
Affiliation:
Department of Physics, Krasnoyarsk University, Svobodnii Prospect 79, 660062Russia;
Paul D. Brown
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK.
Colin J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK.
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Abstract

The prospects for localised point defect control within II-VI compound semiconductors are considered with reference to doping, thermal annealing, electron and ion beam irradiation and localised strain. Interstitials and vacancies generated within electron beam irradiated II-VI compounds interact and coalesce in a TEM foil to form voids decorated by metallic precipitates and the processes of CdTe chemical decomposition are examined. Ion beam and electron beam irradiated material show clear differences in behaviour following annealing of doped and un-doped CdTe. Controlled directional climb of dislocations within electron beam irradiated ZnSe is demonstrated. In view of the differential diffusion of interstitials and vacancies, the prospect of localised semiconductor type conversion is considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 529
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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