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Control of Photo-Induced Degradation in a-Si:H Prepared from Xe-Diluted Silane

Published online by Cambridge University Press:  21 February 2011

Satoshi Mashima ,
Kazuhiro Hasezaki ,
Atsushi Suzuki ,
Peter J. McElheny  and
Akihisa Matsuda
Satoshi Mashima
Affiliation:
Central Glass Co., LTD., 1510 Ohkuchi, Matsusaka, Mie 515, Japan
Kazuhiro Hasezaki
Affiliation:
Mitsubishi Heavy Industries, LTD., 1–1 Akunoura, Nagasaki, 850–91, Japan
Atsushi Suzuki
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan
Peter J. McElheny
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan
Akihisa Matsuda
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan
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Abstract

Films were prepared by the Xe-dilution method in an attempt to mimic the microstructure found in low-photodegradation deuterated films which show a greater number of clustered deuterium and microvoids when compared to conventional hydrogenated films. Common features were found for the light soaking behaviors in the film properties characterized by the electron spin resonance, gas thermal evolution, Raman spectroscopy, and infrared spectroscopy among deuterated, conventional hydrogenated, and Xe-diluted films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 3
Copyright
Copyright © Materials Research Society 1991

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References

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