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Control of Grain Boundary Location By Selective Nucleation Over Amorphous Substrates

Published online by Cambridge University Press:  22 February 2011

T. Yonehara ,
Y. Nishigaki ,
H. Mizutani ,
S. Kondoh ,
K. Yamagata  and
T. Ichikawa
T. Yonehara
Affiliation:
Research Center, Canon Inc., Atsugi city, Kanagawa, 243-01, Japan
Y. Nishigaki
Affiliation:
Research Center, Canon Inc., Atsugi city, Kanagawa, 243-01, Japan
H. Mizutani
Affiliation:
Research Center, Canon Inc., Atsugi city, Kanagawa, 243-01, Japan
S. Kondoh
Affiliation:
Research Center, Canon Inc., Atsugi city, Kanagawa, 243-01, Japan
K. Yamagata
Affiliation:
Research Center, Canon Inc., Atsugi city, Kanagawa, 243-01, Japan
T. Ichikawa
Affiliation:
Research Center, Canon Inc., Atsugi city, Kanagawa, 243-01, Japan
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Abstract

A selective nucleation based crystal-growth-technique over amorphous substrates is originated. The method manipulates nucleation sites and periods and hence, controls the grain boundary location by modifing the substrate surface. In Si, small Si3 N4 nucleation sites are formed, 1–2 pm in diameter, 100 μm in period, over Sio2. One Si nucleus is formed exclusively in the small area of Si3 N4 by CVD. The highly faceted and periodically located nuclei grow over SiO2 up to 100 μm in diameter before impingement. A MOS-FET fabricated inside the island operates comparably to the bulk Si control

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 21
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Smith, H.I., Geis, M.W., Thompson, C.V. and Atwater, H. A. J. Cryst. Growth, 63, 527 (1983)CrossRefGoogle Scholar
2. Yonehara, T., Smith, H.I., Thompson, C.V. and Palmer, J. E. Appl. Phys. Lett., 45, 631 (1984)CrossRefGoogle Scholar
3. Yonehara, T., Smith, H. I., Thompson, C. V. and Palmer, J. E. Proc., 16th Int. Conf. Solid-state devices and Materials, 515 (1984)Google Scholar
4. “Single-crystal silicon on non-single crystal insulators” ed. Cullen, G. W., Special issue of J. Cryst. Growth 63, 527 (1983)Google Scholar
5. Joyce, B. A. and Bradley, J. A. Nature (London) 195, 485, (1962)Google Scholar
6. Yonehara, T., Yoshioka, S. and Miyazawa, S. J. Appl. Phys., 53, 6839 (1982)CrossRefGoogle Scholar