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Contribution to the Dielectric Behavior of Relaxers from the Surface of Nano-Order Cluster in the Materials

Published online by Cambridge University Press:  10 February 2011

Z. -Y. Cheng ,
Aqiang Guo  and
R. S. Katiyar
Z. -Y. Cheng
Affiliation:
Department of Physics, P. O. Box 23343, University of Puerto Rico, San Juan, PR 00931–3343, USA, E-mail: [email protected]
Aqiang Guo
Affiliation:
Department of Physics, P. O. Box 23343, University of Puerto Rico, San Juan, PR 00931–3343, USA.
R. S. Katiyar
Affiliation:
Department of Physics, P. O. Box 23343, University of Puerto Rico, San Juan, PR 00931–3343, USA.
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Abstract

Based on the analysis of the dielectric behavior of relaxor ferroelectrics, it is assumed that the material has two polarization processes. Thus, a formula, which can fit the experimental results very well, is proposed to describe the temperature and frequency dependence of the dielectric constant. The fitted results show that there is a resonance process in the material and the peak of the dielectric constant is determined with both the relaxation and resonance processes. The relaxation time analysis shows that the peak of the dielectric constant indeed consists of two parts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 492: Symposium S – Microscopic Simulation of Interfacial Phenomena in Solids… , 1997 , 337
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Cross, L. E., Ferroelectrics, 76, 241 (1987); 151, 305 (1994).Google Scholar
2. Yao, X., Chen, Z., and Cross, L. E., J. Appl. Phys., 54, 3399, (1983).Google Scholar
3. Cheng, Z. -Y., Katiayr, R. S., Yao, X., and Guo, A., Phys. Rev., B 55, 8165 (1997).Google Scholar
4. Glazounov, A. E., Tagantsev, A. K., and Bell, A. J., Phys. Rev. B, 53, 11281, (1996).Google Scholar
5. Glazounov, A. E., Tagantsev, A. K., and bell, A. J., Ferroelectrics, 184, 217 (1996).Google Scholar
6. Tan, Q. and Viehland, D., Phys. Rev. B 53, 14103 (1996).Google Scholar
7. Cheng, Z. -Y., Katiyar, R. S., and Yao, X., Mat. Res. Soc. Symp. Proc. 453, 455 (1997).Google Scholar
8. Cheng, Z. -Y., Zhang, L. Y., and Yao, X., J. Appl. Phys. 79, 8615 (1996).Google Scholar
9. Cheng, Z. -Y., Katiyar, R. S., Yao, X., and Wang, X. L., to be published.Google Scholar
10. Jonscher, A. K., Dielectric Relaxation in Solids (Chelsea Dielectrics Press, London, 1983).Google Scholar
11. Zhong-Yang, Cheng, Ph.D Thesis, Xian Jaiotong University, 1995.Google Scholar
12. Wang, H. and Xu, Y., Acta. Phys. Sin., 35, 605 (1986).Google Scholar
13. Groves, P., Ferroelectrics, 76, 81 (1987).Google Scholar
14. Nambo, S. and Sugimoto, K., Ferroelectrics, 198, 11 (1997).Google Scholar
15. Frohlich, H., Theory of Dielectrics: Dielectric Constant and Dielectric Loss (Oxford University Press, New York, 1986).Google Scholar
16. Yao, X., Mckinstry, H., Cross, L. E., J. Ame. Sci. 66, 6371 (1983).Google Scholar
17. Erbil, A., Kim, Y., and Gerhardt, R. A., Phys. Revs. Lett. 77, 1628 (1997).Google Scholar