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Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer Movpe Reactor

Published online by Cambridge University Press:  15 February 2011

R.W. Chuang ,
A.Q. Zou ,
H.P. Lee ,
Z.J. Dong ,
F.F. Xiong ,
R. Shih ,
M. Bremser  and
H. Juergensen
R.W. Chuang
Affiliation:
AIXTRON Inc., 1670 Barclay Blvd., Buffalo Grove, IL, 60089, USA
A.Q. Zou
Affiliation:
AIXTRON Inc., 1670 Barclay Blvd., Buffalo Grove, IL, 60089, USA
H.P. Lee
Affiliation:
AIXTRON Inc., 1670 Barclay Blvd., Buffalo Grove, IL, 60089, USA
Z.J. Dong
Affiliation:
Alpha Photonics Inc., 2019 Saturn Street, Monterey Park, CA 91754
F.F. Xiong
Affiliation:
Alpha Photonics Inc., 2019 Saturn Street, Monterey Park, CA 91754
R. Shih
Affiliation:
Alpha Photonics Inc., 2019 Saturn Street, Monterey Park, CA 91754
M. Bremser
Affiliation:
AIXTRON Inc., 1670 Barclay Blvd., Buffalo Grove, IL, 60089 USA
H. Juergensen
Affiliation:
AIXTRON AG, 15-17 Kackertstrasse, Aachen D-52072, Germany
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Abstract

We report both the device fabrication and characterization of InGaN/GaN single quantum well LEDs grown on sapphire substrates using multi-wafer MOVPE reactor. To improve current spreading of the LEDs, a self-aligned process is developed to define LED mesa that is coated with a thin, semi-transparent Ni/Au (40 Å/40 Å) layer. A detailed study on the ohmic contact resistance of Ni/Cr/Au on p-GaN versus annealing temperatures is carried out on transmission line test structures. It was found that the annealing temperatures between 300 to 500°C yield the lowest specific contact resistance rc (0.016 Ω-cm2 at a current density of 66.7 mA/cm). Based on the extracted rc from the transmission line measurement, we estimate that the contact resistance of the p-type GaN accounts for ∼ 88% of the total series resistance of the LED.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.42
Copyright
Copyright © Materials Research Society 1999

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