Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T07:49:21.690Z Has data issue: false hasContentIssue false
  • English
  • Français

Contact Reactions at Thin Film Aluminium/Transition Metal Interfaces

Published online by Cambridge University Press:  21 February 2011

Bernd Schuhmacher  and
Uwe Köster
Bernd Schuhmacher
Affiliation:
University of Dortmund, Dept. of Chemical Engineering, D-4600 Dortmund 50, F.R.Germany
Uwe Köster
Affiliation:
University of Dortmund, Dept. of Chemical Engineering, D-4600 Dortmund 50, F.R.Germany
Get access

Abstract

Contact reactions at thin film Al/TM interfaces (TM = W, Cr, Co, Zr and Ta) have been studied by means of cross sectional transmission electron microscopy. In all cases the first phase formed at the interface was the most aluminium-rich compound as given in the correspondent phase diagram: In the case of Al/W, Al/Cr as well as Al/Co growth of Al12W, Al7Cr, and Al9Co2, respectively, with rather smooth, planar morphology has been observed. On the other hand, Al/Zr and Al/Ta contacts exhibit a irregular growth morphology of Al3Zr, and Al3Ta, respectively.

In addition, precipitation behaviour of rapidly solidified supersaturated Al(TM) solid solutions upon thermal annealing has been studied, in order to get a better insight on preferred orientation relationships between aluminium and the aluminides as well as on the influence of defects, e.g. grain boundaries.

Based on the observed morphologies and orientation relationships a model will be proposed for the different modes of interfacial reactions, i.e. with planar or irregular growth morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 323
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Ghate, P.B., Thin Solid Films 93, 359 (1982)Google Scholar
[2] Ho, P.S. and Kwok, T., Rep. Prog. Phys. 52, 301 (1989)Google Scholar
[3] Baglin, J.E.E. and Poate, J.M. in Thin Films-Interdiffusion and Reactions, edited by Poate, J.M., Tu, K.N. and Mayer, J.W. Google Scholar
[4] Colgan, E.G., Ph.D. Thesis, Cornell University 1987 and references cited thereinGoogle Scholar
[5] Howard, J.K., Lever, R.F., Smith, P.J. and Ho, P.S. J. Vac. Sci. Technol. 13, 68 (1976)Google Scholar
[6] Lever, R.F., Howard, J.K., Chu, W.K. and Smith, P.J., J. Vac. Sci. Technol. 14, 158 (1977)Google Scholar
[7] Howell, P.R. and Honeycombe, R.W.K. in Proceedings of an International Conference on Solid->Solid Phase Transformations, Pittsburgh, 1981, edited by Aaronson, H.I., Laughlin, D.E., Seharka, R.E. and Wayman, C.M. (Trans AIME, 1981), p.399 Solid+Phase+Transformations,+Pittsburgh,+1981,+edited+by+Aaronson,+H.I.,+Laughlin,+D.E.,+Seharka,+R.E.+and+Wayman,+C.M.+(Trans+AIME,+1981),+p.399>Google Scholar
[8] Sheng, T.T. in Analytical Techniques for Thin Films, edited by Tu, K.N. and Rosenberg, R. (Academic Press, 1988), Ch.7Google Scholar
[9] Nes, E., Acta Metall. 20, 499 (1972)Google Scholar
[10] Cooper, M.J., Acta Cryst. 13, 257 (1960)Google Scholar
[11] LeGoues, F.K., Wittmer, M., Kwok, T., Huang, H.-C.W. and Ho, P.S., J. Electrochem. Soc. 134, 940 (1987)Google Scholar