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Contact Characterizations of ZrN Thin Films Obtained by Reactive Sputtering
Published online by Cambridge University Press: 01 February 2011
Abstract
The contact properties of ZrN on p-type Si obtained by magnetron reactive sputtering were investigated. Schottky diodes characteristics were evaluated by current-voltage (I-V) and capacitance voltage (C-V) measurements. The barrier heights obtained by I-V and C-V are in the range of 0.55-0.63V and 0.88-0.91V, respectively.
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- Copyright © Materials Research Society 2008