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Constant Temperature LEC Growth of Uniform Composition InGaAs Bulk Crystals through Continuous Supply of GaAs

Published online by Cambridge University Press:  25 February 2011

K. Nakajima ,
T. Kusunoki  and
K. Kuramata
K. Nakajima
Affiliation:
Fujitsu Laboratories, Ltd., Morinosato-Wakamiya 10–1, Atsugi, Japan.
T. Kusunoki
Affiliation:
Fujitsu Laboratories, Ltd., Morinosato-Wakamiya 10–1, Atsugi, Japan.
K. Kuramata
Affiliation:
Fujitsu Laboratories, Ltd., Morinosato-Wakamiya 10–1, Atsugi, Japan.
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Abstract

A 45 mm long In0.05 Ga0.95 As ternary bulk crystal with an extremely uniform composition has succeeded to be grown at a constant temperature by the liquid encapsulated Czochralski (LEC) method with a continuous supply of only GaAs to the pseudobinary InAs-GaAs growth melt. A double crucible which has both growth and source melt zones has been developed to improve the controllability of die supply of GaAs to the melt. These zones are separated by a cylindrical wall with a slit through which source elements are continuously supplied from die source melt zone to the growth melt zone. These results demonstrate mat large and uniform InGaAs bulk crystals can be grown using the constant temperature LEC method with a double crucible and with a continuous supply of only GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 197
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Bonner, W.A., Skromme, B.J., Berry, E., Gilchrist, H.L., and Nahory, R.E., in Proc. 15th Intern. Symp. on GaAs and Related Compounds, Atlanta, Georgia, 1988, Inst. Phys. Conf. Ser. 96, ed. Harris, J.S. (Inst. Phys. Bristol, 1989) pp. 337–342.Google Scholar
[2] Nakajima, K., Kusunoki, T., and Takenaka, C., J. Cryst. Growth 113. 485 (1991).Google Scholar
[3] Kusunoki, T., Takenaka, C., and Nakajima, K., J. Cryst. Growth 115, 723 (1991).Google Scholar
[4] Nakajima, K. and Kusunoki, T., in Proc. 18th Intern. Symp. on GaAs and Related Compounds, Seatde, Washington, 1991, Inst. Phys. Conf. Ser. 120, ed. Stringfellow, G.B. (Inst Phys. Bristol, 1992) pp. 67–71.Google Scholar