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Confocal Photoluminescence and Cathodoluminescence Studies of AlGaN

Published online by Cambridge University Press:  01 February 2011

V. Dierolf ,
O. Svitelskiy ,
G. S. Cargill III ,
A. Yu. Nikiforov ,
J. Redwing  and
J. Acord
V. Dierolf
Affiliation:
Department of Physics and Center for Optical Technologies, Lehigh Univ., Bethlehem, PA 18015, U.S.A.
O. Svitelskiy
Affiliation:
Department of Physics and Center for Optical Technologies, Lehigh Univ., Bethlehem, PA 18015, U.S.A.
G. S. Cargill III
Affiliation:
Department of Materials Science and Engineering, Lehigh Univ., Bethlehem, PA 18015, U.S.A.
A. Yu. Nikiforov
Affiliation:
Department of Materials Science and Engineering, Lehigh Univ., Bethlehem, PA 18015, U.S.A.
J. Redwing
Affiliation:
Department of Materials Science and Engineering, Penn State University, University Park, PA 16802, U.S.A.
J. Acord
Affiliation:
Department of Materials Science and Engineering, Penn State University, University Park, PA 16802, U.S.A.
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Abstract

AlxGa1-xN films grown by MOCVD on sapphire and SiC substrates have been investigated by spatially resolved confocal photoluminescence microscopy and cathodoluminescence spectroscopy and mapping. The sample on SiC has a rougher topography, but it is much more uniform in emission intensity and wavelength than the sample on sapphire.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.64.
Copyright
Copyright © Materials Research Society 2004

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References

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