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The Confining Potential for Carriers in Planar Doped GaAs and the Effect of Photoexcitation

Published online by Cambridge University Press:  21 February 2011

D. Richards ,
J. Wagner ,
K. Ploog  and
A. Fischer
D. Richards
Affiliation:
Fraunhofer-Institut fir Angewandte Festkörperphysik, Tullastrasse 72, D-7800 Freiburg, FRG
J. Wagner
Affiliation:
Fraunhofer-Institut fir Angewandte Festkörperphysik, Tullastrasse 72, D-7800 Freiburg, FRG
K. Ploog
Affiliation:
Max-Planck-Institut fir Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, FRG
A. Fischer
Affiliation:
Max-Planck-Institut fir Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, FRG
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Abstract

Single Be and Si δ-doped layers in GaAs have been investigated by Raman spectroscopy. GaAs/AlxGa1-xAs heterointerfaces, placed 30nm from the dopant spike on either side, facilitate optical measurements by the confinement of photogenerated minority carriers. Self-consistent subband calculations have been performed to compute the subband structure of the two-dimensional electron or hole gas which is confined by the space-charge induced potential well at the δ-doping layer. Upon increasing photoexcitation, the increase in density of photocreated electrons in the Be structure is clearly seen in the polarised Raman scattering spectrum by the appearance, and subsequent increase in frequency, of the electron plasmon modes. The electric field at the top GaAs/AlxGa1-xAs interface is monitored by measuring the strength of electric field induced LO phonon scattering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 63
Copyright
Copyright © Materials Research Society 1992

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References

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