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Confinement of Nanocrystals and Possible Charge Storage Mechanism for MIS Memory Devices with Ge Nanocrystals Embedded in SiO2

Published online by Cambridge University Press:  21 March 2011

V. Ho ,
W.K. Choi ,
W.K. Chim ,
L.W. Teo ,
A. Y. Du  and
C. H. Tung
V. Ho
Affiliation:
Department of Electrical &Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
W.K. Choi
Affiliation:
Department of Electrical &Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore117576
W.K. Chim
Affiliation:
Department of Electrical &Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore117576
L.W. Teo
Affiliation:
Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore117576
A. Y. Du
Affiliation:
Institute of Microelectronics, 11 Science Park Road, SingaporeScience Park II, Singapore 117685
C. H. Tung
Affiliation:
Institute of Microelectronics, 11 Science Park Road, SingaporeScience Park II, Singapore 117685
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Abstract

Memory effect in a metal-insulator-silicon (MIS) structure with the insulator layer consisting of a sputtered capping SiO2 / Ge nanocrystals embedded in SiO2/ rapid thermal oxide structure has been observed. For the devices with a co-sputtered SiO2+Ge middle layer, larger nanocrystals were formed devices with a higher Ge concentration. It was noted that for such devices, the RTO and the capping oxide layers were able to confine the nanocrystals within the middle layer to some extent. However, in devices with pure sputtered Ge middle layer, the RTO and capping oxide layers were not as effective in confining the Ge nanocrystals. In addition, we have consistently observed memory effect from devices annealed in Ar and the absence of memory effect from devices annealed in forming gas. However, Ge nanocrystals were found in devices annealed in both ambient. This implies that having nanocrystals does not necessarily imply the presence of charge storage or memory effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 818: Symposium M – Nanoparticles and Nanowire Building Blocks-Synthesis, Processing, Characterization and Theory , 2004 , M11.29.1
Copyright
Copyright © Materials Research Society 2004

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