Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T07:48:55.106Z Has data issue: false hasContentIssue false
  • English
  • Français

Conductivity Control of AlGaN. Fabrication of AlGaN/GaN Multi-Heterośtructure and their Application to UV/Blue Light Emitting Devices

Published online by Cambridge University Press:  25 February 2011

I. Akasaki  and
H. Amano
I. Akasaki
Affiliation:
Nagoya University, Department of Electronics, Furo-cho Nagoya 464–01, Japan
H. Amano
Affiliation:
Nagoya University, Department of Electronics, Furo-cho Nagoya 464–01, Japan
Get access

Abstract

The method for controlling the electrical properties of n-type GaN and AIGaN have been established. Both GaN and AIGaN films having p - type conduction have been realized for the first time. High quality AIGaN/GaN mu I t i-he t er ostrueture showing clear quantum size effect has been fabricated. P-n junction type UV/blue LED with double he t e ros t rue ture have been developed for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 383
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y.; Appl. Phys. Lett., 48 (1986) 353.CrossRefGoogle Scholar
[2] Amano, H., Akasaki, I., Hiramatsu, K. and Koide, N.; Thin Solid Films, 1963 (1988) 415.Google Scholar
[3] Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K. and Sawaki, N.; J. Cryst. Growth, 98 (1989) 209.Google Scholar
[4] Koide, Y., Itoh, N., Itoh, K., Sawaki, N. and Akasaki, I.; Jpn. J. Appl. Phys., 27 (1988) 1156.Google Scholar
[5] Amano, H., Kito, M., Hiramatsu, K. Jpn. J. Appl. Phys., 28 (1989) L2112.Google Scholar
[6] Itoh, K., Hiramatsu, K., Amano, H. and Akasaki, I.; J. Cryst. Growth, 104 (1990) 533.Google Scholar
[7] Itoti, K., Kawamoto, T., Amano, H., Hiramatsu, K. and Akasaki, I.; Jpn. J. Appl. Phys., 30 (1991) 1924.Google Scholar
[8] Amano, H., Asahi, T. and Akasaki, I.; Jpn. J. Appl. Phys., 29 (1990) L205.Google Scholar
[9] Amano, H., Asahi, T., Kito, M. and Akasaki, I.; J. Lumin., 48&49 (1991)889.CrossRefGoogle Scholar
[10] Amano, H., Kitoh, M., Hiramatsu, K. and Akasaki, I.; J. Electrochem. Soc., 137 (1990) 1639.CrossRefGoogle Scholar
[11] Akasaki, I., Amano, H., Kito, M. and Hiramatsu, K.; J. Lumin., 48&49 (1991)666.Google Scholar
[12] Harrison, W. A.; Electronics structure and the properties of Solids, W.H. Freeman and Company, San Francisco (1980) 253.Google Scholar
[13] Amano, H., Kitoh, M., Hiramatsu, K. and Akasaki, I.; Inst. Phys. Conf. Ser., 106 (1989) 725.Google Scholar