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Conductive Tungsten-Based Layers Synthesized by Ion Implantation into 6H-Silicon Carbide

Published online by Cambridge University Press:  03 September 2012

H. Weishart ,
J. Schoneich ,
M. Voelskow  and
W. Skorupa
H. Weishart
Affiliation:
Forschungszentrum Rossendorf e.V., Institut fiir Ionenstrahlphysik und Materialforschung, Postfach 510119, D-01314 Dresden, Germany
J. Schoneich
Affiliation:
Forschungszentrum Rossendorf e.V., Institut fiir Ionenstrahlphysik und Materialforschung, Postfach 510119, D-01314 Dresden, Germany
M. Voelskow
Affiliation:
Forschungszentrum Rossendorf e.V., Institut fiir Ionenstrahlphysik und Materialforschung, Postfach 510119, D-01314 Dresden, Germany
W. Skorupa
Affiliation:
Forschungszentrum Rossendorf e.V., Institut fiir Ionenstrahlphysik und Materialforschung, Postfach 510119, D-01314 Dresden, Germany
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Abstract

We studied high dose implantation of tungsten into 6H-silicon carbide in order to synthesize an electrically conductive layer. Implantation was performed at 200 keV with a dose of 1.2x 1017 WIcm 2 at temperatures between 200°C and 400°C. The influence of implantation temperature on the distribution of W in SiC was investigated and compared to results obtained earlier from room temperature (RT) and 500°C implants. Rutherford backscattering spectrometry (RBS) was employed to study the structure and composition of the implanted layers. Implantation at temperatures between RT and 300°C did not influence the depth distribution of C, Si and W. The W depth profile shows a conventional Gaussian shape. Implanting at higher temperatures led to a more confined W rich layer in the SiC. This confinement is explained by Ostwald ripening which is enabled during implantation at temperatures above 300°C. The depth of the implantation induced damage decreases slightly with increasing implantation temperature, except for 400°C implantation. The amount of damage, however, is significantly reduced only for implantation at 500°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 283
Copyright
Copyright © Materials Research Society 1997

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