Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T02:39:30.781Z Has data issue: false hasContentIssue false

Conductive Atomic Force Microscopy and Scanning Impedance Microscopy for the Imaging of Electrical Domain in CaCu3Ti4O12 Perovskite Oxide

Published online by Cambridge University Press:  31 January 2011

Raffaella Lo Nigro
Affiliation:
[email protected], IMM-CNR, catania, Italy
Patrick Fiorenza
Affiliation:
[email protected], IMM-CNR, catania, Italy
Vito Raineri
Affiliation:
[email protected], IMM-CNR, catania, Italy
Get access

Abstract

Electrical characterization of CaCu3Ti4O12 (CCTO) ceramics with scanning probe based techniques has been carried out. In particular, conductive atomic force microscopy (C-AFM) and scanning impedance microscopy (SIM) have been used to demonstrate the presence, shape and size in CCTO ceramics of the different electrically domains, both at the grain boundaries and within the grains. The electrical characteristics of single grains and of single domains have been evaluated and it has been observed that the conductive grains are surrounded by insulating grain boundaries.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Subramanian, M. A. Li, D. Duan, N. Reisner, B. A. and Sleight, A. W. J. Solid State Chem. 151, 323 (2000).Google Scholar
2 Homes, C. C. Vogt, T. Shapiro, S. M. Wakimoto, S. and Ramirez, A. P.; Science 293, 217 (2001).Google Scholar
3 He, L. Neaton, J. B. Cohen, M. H. Vanderbilt, D. and Homes, C.C. Phys. Rev. B65, 214112 (2002).Google Scholar
4 Adams, T. B. Sinclair, D. C. and West, A. R.; Adv. Mater. 14, 1321 (2002).Google Scholar
5 Fiorenza, P. Nigro, R. Lo, Bongiorno, C. Raineri, V. Ferarrelli, M. C. Sinclair, D. C. West, A. R. Appl. Phys. Lett. 92, 182907 (2008).Google Scholar
6 Fu, D. Taniguchi, H. Taniyama, T. Itoh, M. and Koshihara, S.Y. Chem. Mater. 20, 1694 (2008).Google Scholar
7 Chung, S.Y. Kim, I.D. and Kang, S.J. L. Nat. Mater. 3, 774 (2004).Google Scholar
8 Raineri, V. Fiorenza, P. Nigro, R. Lo, Sinclair, D. C. Solid State Phenom. 131-133, 443447 (2008).Google Scholar
9 Fiorenza, P. R. Lo Nigro, Sciuto, S. Delugas, P. Raineri, V. Toro, R. G. Catalano, M. R. Malandrino, G. J. Appl. Phys., 105, 061634 (2009).Google Scholar
10 Fiorenza, P. Nigro, R. Lo, Raineri, V. Toro, R. G. Catalano, M. R. J Appl Phys, 102, 116103 (2007)Google Scholar
11 Goghero, D. Raineri, V. and Giannazzo, F. Appl. Phys. Lett. 81, 1824 (2002).Google Scholar
12 Giannazzo, F. Goghero, D. and Raineri, V. J. Vac. Sci. Technol. B22, 2391 (2004).Google Scholar