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Conducting Oxide Electrode to Mitigate Mechanical Instability (Bubble Formation) during Operation of La1-xSrxMnO3 (LSMO) based RRAM

Published online by Cambridge University Press:  18 March 2013

Rajashree Nori ,
N. Ravi Chandra Raju ,
Naijo Thomas ,
Neeraj Panwar ,
Pankaj Kumbhare ,
Gurudatt Rao ,
Senthil Srinivasan ,
N. Venkataramani  and
U. Ganguly
Rajashree Nori
Affiliation:
Center of Excellence in Nanoelectronics, Indian Institute of Technology-Bombay, Mumbai 400076, India
N. Ravi Chandra Raju
Affiliation:
Center of Excellence in Nanoelectronics, Indian Institute of Technology-Bombay, Mumbai 400076, India
Naijo Thomas
Affiliation:
Center of Excellence in Nanoelectronics, Indian Institute of Technology-Bombay, Mumbai 400076, India
Neeraj Panwar
Affiliation:
Center of Excellence in Nanoelectronics, Indian Institute of Technology-Bombay, Mumbai 400076, India
Pankaj Kumbhare
Affiliation:
Center of Excellence in Nanoelectronics, Indian Institute of Technology-Bombay, Mumbai 400076, India
Gurudatt Rao
Affiliation:
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology-Bombay, Mumbai 400076, India
Senthil Srinivasan
Affiliation:
Center of Excellence in Nanoelectronics, Indian Institute of Technology-Bombay, Mumbai 400076, India
N. Venkataramani
Affiliation:
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology-Bombay, Mumbai 400076, India
U. Ganguly
Affiliation:
Center of Excellence in Nanoelectronics, Indian Institute of Technology-Bombay, Mumbai 400076, India
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Abstract

The role of field-induced electrochemical migration oxygen ions in switching behaviour of LSMO films is established through I-V measurements under various top electrode device configurations. We report observation of bubbling, mechanical damage and delamination of top electrode in LSMO-based large area RRAM devices. Polarity dependence of this phenomenon, as observed in-situ during electrical measurements, reveals O-evolution to be the likely cause for such electrode damage. The effect of this phenomenon on switching behaviour of devices with reactive as well as inert top electrodes is presented. To mitigate the electrode integrity issue, we explore the use of conducting oxide electrodes on the active LSMO film.

Keywords

metal-insulator transitionelectromigrationmemory
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1507: Symposium AA – Oxide Nanoelectronics and Multifunctional Dielectrics , 2013 , mrsf12-1507-aa12-40
Copyright
Copyright © Materials Research Society 2013 

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References

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