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Condition of Interface: Anodic Oxide - A3B3 Semiconductor
Published online by Cambridge University Press: 21 February 2011
Abstract
In this article the analysis of Auger-profiles of anodic oxide-semiconductor structures, which were formed on the base of InP, InGaAs and InGaAsP was made. It was determined that anodic oxide-InP interface has minimum thickness of intermediate layer between oxide and semiconductor. It got the thermodynamic substantiation of the effects observed.
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- Copyright © Materials Research Society 1995