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Condensed Chlorine Etching of GaAs Induced by Excimer Laser Radiation

Published online by Cambridge University Press:  25 February 2011

M.B. Freiler ,
Ming Chang Shih ,
G. Haase ,
R. Scarmozzino  and
R.M. Osgood Jr
M.B. Freiler
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY
Ming Chang Shih
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY
G. Haase
Affiliation:
Currently at University of Wisconsin, Madison
R. Scarmozzino
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY
R.M. Osgood Jr
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY
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Abstract

We report excimer laser induced etching of GaAs samples covered with a layer of condensed Cl2. The experiments were performed at low temperatures (120-150 K) and in a chlorine ambient (PC12=1-40 mTorr). Spatially well-resolved, anisotropic etching has been demonstrated with an observed etch rate of 0.25 Å/pulse (0.1 μm/min for typical parameters). The etch rate is characterized as a function of the various system parameters (pressure, temperature, laser rep-rate, etc.), and a model is proposed to describe the etching mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 15
Copyright
Copyright © Materials Research Society 1992

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References

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