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Concentration Quenching of Tb3+ Doped SiC:H and AlN Thin Films in Photoluminescence and Cathodoluminescence Measurements

Published online by Cambridge University Press:  20 June 2013

J. A. Guerra ,
F. Benz ,
L. Montañez ,
R. Grieseler ,
P. Schaaf ,
F. De Zela ,
A. Winnacker ,
H. P. Strunk  and
R. Weingärtner
J. A. Guerra
Affiliation:
Pontifical Catholic University of Peru, Sciences Department, Physics Section, Av. Universitaria 1801, Lima 32, Peru. University of Erlangen-Nurnberg, Institute of Material Science 6, Martensstr. 7, 91058 Erlangen, Germany
F. Benz
Affiliation:
University of Stuttgart, Institute of Materials Science, Chair of Material Physics, Heisenbergstr. 3, 70569 Stuttgart, Germany
L. Montañez
Affiliation:
Pontifical Catholic University of Peru, Sciences Department, Physics Section, Av. Universitaria 1801, Lima 32, Peru.
R. Grieseler
Affiliation:
Technical University of Ilmenau, Institute of Materials Technology, POB 100565, 98684 Ilmenau, Germany.
P. Schaaf
Affiliation:
Technical University of Ilmenau, Institute of Materials Technology, POB 100565, 98684 Ilmenau, Germany.
F. De Zela
Affiliation:
Pontifical Catholic University of Peru, Sciences Department, Physics Section, Av. Universitaria 1801, Lima 32, Peru.
A. Winnacker
Affiliation:
University of Erlangen-Nurnberg, Institute of Material Science 6, Martensstr. 7, 91058 Erlangen, Germany
H. P. Strunk
Affiliation:
University of Stuttgart, Institute of Materials Science, Chair of Material Physics, Heisenbergstr. 3, 70569 Stuttgart, Germany
R. Weingärtner
Affiliation:
Pontifical Catholic University of Peru, Sciences Department, Physics Section, Av. Universitaria 1801, Lima 32, Peru. University of Erlangen-Nurnberg, Institute of Material Science 6, Martensstr. 7, 91058 Erlangen, Germany
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Abstract

We present a systematic study of photo- and cathodoluminescence measurements in the visible of Terbium doped SiC:H and AlN thin films. The Terbium atomic concentrations vary from 0.9 to 10% for the SiC:H and from 0.8 to 6% for the AlN samples. For both materials the increase of the emission intensity with concentration and the subsequent quenching effect can be seen. The optimal concentration for the highest light emission is found. Photoluminescence excitation spectroscopy addresses the enhancement light emission mechanisms of the principal emission electronic transition of Terbium at ∼542 nm.

Keywords

Tbsputteringoptical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1571: Symposium RR – Lanthanide Nanomaterials for Imaging, Sensing and Optoelectronics , 2013 , mrss13-1571-rr04-04
Copyright
Copyright © Materials Research Society 2013 

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References

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