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Computer Simulation of Marker Evolution Upon Ion Irradiation

Published online by Cambridge University Press:  26 February 2011

Fu-Zhai Cui ,
Heng-De Li  and
Bai-Xin Liu
Fu-Zhai Cui
Affiliation:
Departement of Engineering Physics, Qinghua University, Beijing, China
Heng-De Li
Affiliation:
Departement of Engineering Physics, Qinghua University, Beijing, China
Bai-Xin Liu
Affiliation:
Departement of Engineering Physics, Qinghua University, Beijing, China
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Abstract

In ion beam mixing, the subject on the marker evolution of Si/Pt/Si target during 300 keV Xe ion irradiation has been an interesting topic of recent years. A cottputer simulation for this system by using the Monte Carlo code TCIS-4 is reported here. Dynamic target model was employed. Some radiation-enhanced diffusion and relaxation of the displacement cascades were also considered. Results of this simulation study reveal the evolution of Pt marker profile with fluences during bombardment. The shifts of Pt marker and the dispersions evaluated from the profiles agree fairly well with experimental date, demonstrating a reslistic model of the target being irradiated is important.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 227
Copyright
Copyright © Materials Research Society 1986

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References

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