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Compositional Modulations and Vertical Two-Dimensional Arsenic-Precipitate Arrays and in Low Temperature Grown Al0.3GA0.7AS

Published online by Cambridge University Press:  22 February 2011

K.Y. Hsieh ,
Y.L. Hwang ,
T. Zhang  and
R.M. Kolbas
K.Y. Hsieh
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C
Y.L. Hwang
Affiliation:
LSI logic, 1601 McCarthy Blvd M.S. B-142 Milpitas CA 95035, U.S.A
T. Zhang
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695-7911, U.S.A
R.M. Kolbas
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695-7911, U.S.A
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Abstract

Compositional modulations and arsenic precipitates in annealed A10.3Ga0.7As layers which were grown at a low substrate temperature (200° C) by molecular beam epitaxy (MBE) were studied by transmission electron microscopy (TEM). These layers were used as surface layer which were applied on metal-insulator-semiconductor (MIS) diode. The planar and cross sectional TEM micrographs reveal that compositional modulations occurred when the thickness of LT AIGaAs was over 1500Å. The wavelength of the modulations varies between 100-200 Å and the direction of the modulation is along \011]. The arsenic precipitates were formed after annealed and the distribution of them followed the compositional modulation. Vertical two dimensional arsenic-precipitates arrays were arranged in the low aluminum constitute region. These novel microstructures result from the strain-induced spinodal decomposition and the arsenic precipitates redistribution process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 395
Copyright
Copyright © Materials Research Society 1994

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