Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-17T18:11:10.157Z Has data issue: false hasContentIssue false
  • English
  • Français

Compositional and Structural Properties of Sputtered Plzt Thin Films

Published online by Cambridge University Press:  25 February 2011

P.J. Borrelli ,
P.H. Ballentine  and
A.M. Kadin
P.J. Borrelli
Affiliation:
CVC Products, Inc., 525 Lee Road, Rochester, NY 14603
P.H. Ballentine
Affiliation:
CVC Products, Inc., 525 Lee Road, Rochester, NY 14603
A.M. Kadin
Affiliation:
University of Rochester, Dept. of Electrical Engineering, Rochester, NY 14627
Get access

Abstract

Thin films of lanthanum-modified lead zirconate-titanate (PLZT) were prepared by rf magnetron sputtering from a single oxide target onto a heated substrate. The target consisted of Pbl-xLaxZryTi1-yO3 with composition close to x=8% and y= 65%, either as a loose powder or a solid sintered disk. Under appropriate conditions, the desired perovskite phase formed in situ without any subsequent post-anneal. Film composition and structure were correlated with deposition parameters, including substrate temperature, target composition, gas pressures, and target aging. For deposition onto MgO or A12O3 crystalline substrates, perovskite PLZT films formed if there was sufficient Pb at the target surface, sufficient oxygen in the sputter gas (≈ 50%), and a substrate temperature >≈600°C. Target heating led to excessive Pb loss from the loose powder target; this was much less significant for the solid target. In addition, it was found that deposition onto an epitaxial perovskite substrate promoted formation of the perovskite phase, leading to an epitaxial film. A prototype ferroelectric capacitor was fabricated by depositing a conducting perovskite film (the high-Tc superconductor YBa2 Cu3O7 ) on a perovskite substrate, sputtering PLZT on top, with Ag for a top electrode. Measurements indicate a remanent polarization of 5 μC/cm2 and a coercive field of 900 V/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 417
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Myers, E.R. and Kingon, A.I., ed., Ferroelectric Thin Films MRS Symp. Proc. 200 (Materials Research Society, Pittsburgh, 1990).Google Scholar
2. Scott, J.F. and Araujo, C.A. Paz de, Science 246, 1400 (1989).Google Scholar
3. Parker, L.H. and Tasch, A.F., IEEE Circuits and Devices Mag. 1990, 17.Google Scholar
4. Wasa, K., Yamazaki, O., Adachi, H., Kawaguchi, T., and Setsune, K., J. Lightwave Technol. LT–2, 710 (1984).Google Scholar
5. Haertling, G.H., J. Am. Ceram. Soc. 54, 304 (1971).Google Scholar
6. Sanchez, L.E., Wu, S.Y., and Naik, I.K., Appl. Phys. Lett. 56, 2399 (1990).Google Scholar
7. Roy, D., Krupanidhi, S.B., and Dougherty, J.P., J. Appl. Phys. 69, 7930 (1991).Google Scholar
8. Adachi, H., Mitsuyu, T., Yamazaki, O., and Wasa, K., J. Appl. Phys. 60, 736 (1986).Google Scholar
9. Sreenivas, K. and Sayer, M., J. Appl. Phys. 64, 1484 (1988).Google Scholar
10. Ballentine, P.H., Allen, J.P., Kadin, A.M., and Mallory, D.S., J. Vac. Sci. Technol. A9, 1118 (1991).Google Scholar
11. Kadin, A.M., Ballentine, P.H., Argana, J., and Rath, R.C., IEEE Trans. Magn. 25, 2437 (1989).Google Scholar
12. Ramesh, R., Inam, A., Chan, W.K., Wilkens, B., Myers, K., Remschnig, K., Hart, D.L., and Tarascon, J.M., Science 252, 944 (1991).Google Scholar